• Like
Self monitoring breakdown avoids computer chip damages
Upcoming SlideShare
Loading in...5
×

Thanks for flagging this SlideShare!

Oops! An error has occurred.

Self monitoring breakdown avoids computer chip damages

  • 249 views
Published

Self-monitoring of Breakdown in Integrated Semiconductor Devices …

Self-monitoring of Breakdown in Integrated Semiconductor Devices

The breakdown monitoring which is the object of this invention is achieved in real time by means of a photo diode which is integrated in the semiconductor device. During a breakdown, a p-n junction always emits light. It is this light emission that is recorded by the photo diode which is integrated in close proximity of the junction. In response to the strength of the light emission, one can then adjust the voltage or current that is applied to, resp. passes through the junction. Advantages: increased power of transistors, e.g. in oscillator circuits (radar, etc), increased reliability of ICs, increased operating range, protection from destruction.


Published in Education , Business , Technology
  • Full Name Full Name Comment goes here.
    Are you sure you want to
    Your message goes here
    Be the first to comment
    Be the first to like this
No Downloads

Views

Total Views
249
On SlideShare
0
From Embeds
0
Number of Embeds
1

Actions

Shares
Downloads
3
Comments
0
Likes
0

Embeds 0

No embeds

Report content

Flagged as inappropriate Flag as inappropriate
Flag as inappropriate

Select your reason for flagging this presentation as inappropriate.

Cancel
    No notes for slide

Transcript

  • 1. Semiconductor Technology | Technology Offer Self-monitoring of Breakdown in Integrated Semiconductor Devices Technological Challenge Your Advantages at a Glance: Fast integrated circuits are known to have an early breakdown at p-n junctions. The breakdown occurs  Increased power of transistors, e.g. in oscillator circuits (radar, etc) because of the possibility of above a critical field strength and leads to the operating the transistors at the breakdown point. destruction of the integrated circuit. Therefore, to avoid destruction, the device is only able to be  Increased reliability of ICs through the ability to operated in a very limited operating range. monitor weak points continuously and respond with appropriate regulatory interventions.  Increased operating range and increased power of Current Status of Technology semiconductor elements and integrated circuits. To date, breakdowns can only be prevented by  Increased temperature range. external voltage or current control. When taking into account individual variations of devices and the effect  Increased capacity to deal with variability in device of changes in temperature, the current approach characteristics. severely limits the operating range. This restriction  Protection from destruction and consequent failure results in a greatly reduced performance. to perform. Innovation The breakdown monitoring which is the object of this Patent Portfolio invention is achieved in real time by means of a photo diode which is integrated in the semiconductor A German patent (DE 102007002820) has been device. During a breakdown, a p-n junction always granted, and European and US applications were emits light. It is this light emission that is recorded by lodged in 2009. the photo diode which is integrated in close proximity of the junction. In response to the strength of the light emission, one can then adjust the voltage or current that is applied to, resp. passes through the Technology Transfer junction. When the light emission by the p-n junction The Technologie-Lizenz-Büro GmbH has been increases above a certain value, the voltage (or charged with the commercialization and now offers current) across the junction is reduced until the light companies the opportunity to obtain a license to emission is below the critical threshold. By this exploit this new technology. means, a complete breakdown can be prevented while allowing operation over an extended range. The regulation mechanism can also be integrated into For further information, please contact: the semiconductor element. It is further possible to monitor several p-n junctions within an integrated circuit by means of several photodiodes. This Mr Emmerich Somlo invention allows the operation of an element, for esomlo@tlb.de example a transistor, at a level just below breakdown Technologie-Lizenz-Büro (TLB) or even at the breakdown level without risking der Baden-Württembergischen Hochschulen GmbH destruction. This monitoring and regulatory Ettlinger Strasse 25, D-76137 Karlsruhe, Germany arrangement allows the operating range to be Tel. +49 721 79004-0, Fax +49 721 79004-79 broadened and increases the performance without www.tlb.de the risk of the junction being destroyed. Copyright © 2007 Technologie-Lizenz-Büro (TLB) der Baden-Württembergischen Hochschulen GmbH