BC556/BC557/BC558/BC559/BC560 Transistor data sheet

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BC556/BC557/BC558/BC559/BC560 Transistor data sheet

  1. 1. BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BC556 : BC557/560 : BC558/559 VCEO Value -80 -50 -30 V V V -65 -45 -30 Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 Units V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -30V, IE=0 Min. Typ. Max. -15 hFE VCE (sat) DC Current Gain VCE= -5V, IC=2mA 110 Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 -300 -650 VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA -600 fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz Cob Output Capacitance Noise Figure VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz 800 -660 : BC556/557/558 : BC559/560 : BC559 : BC560 mV mV mV mV -750 -800 VCB= -10V, IE=0, f=1MHz NF Units nA 150 mV mV MHz 6 2 1 1.2 1.2 pF 10 4 4 2 dB dB dB dB hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
  2. 2. BC556/557/558/559/560 Typical Characteristics 1000 -50 IB = -400µA VCE = -5V IB = -350µA -40 IB = -300µA -35 IB = -250µA -30 IB = -200µA -25 -20 IB = -150µA -15 IB = -100µA -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50µA -5 1 -0.1 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -100 Figure 2. DC current Gain -100 -10 VCE = -5V IC = -10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic V BE(sat) -0.1 VCE(sat) -10 -1 -0.1 -0.01 -0.1 -1 -10 -100 -0.2 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage f=1MHz IE = 0 -0.4 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Cob(pF), CAPACITANCE -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -1 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, August 2002
  3. 3. BC556/557/558/559/560 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
  4. 4. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1

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