By
Karanvir Singh
10105EN065
•
•
•
•
•
•
•

•

Introduction to 3D transistors
Need for 3D transistors
Operation
Comparison with 2D transistors
Advantag...
3D transistors employ a single gate stacked on top
of two vertical gates allowing for essentially three
times the surface ...


The number of transistors on an integrated circuit
doubles approximately every two years which is
achieved by scaling d...








Silicon-only planar transistors are fast approaching their
scaling limit.
Short channel effects limiting sca...
Planar MOSFET Scaling (Short-Channel Effect)

Lg = 0.35 m, Tox = 8 nm

Lg = 0.18 m, Tox = 4.5 nm

Short-Channel Effect

Sh...
a. DIBL (Drain Induced Barrier Lowering) effect
shifts the characteristics to the left when VD is
increased.
b. S increase...
3D or Tri-Gate transistors form conducting channels
on three sides of a vertical fin structure, providing
“fully depleted”...
The additional control enables as much transistor
current flowing as possible when the transistor is in
the 'on' state (fo...
Transistor
characteristics

Planar MOSFET




Steeper subthreshold slope that
reduces leakage
current.
Better switching
operation.
The steeper sub-threshold slope can also be used to target a
lower threshold voltage, allowing transistors to operate at l...
2D vs. 3D transistor


22 nm 3D Tri-Gate
transistors can
operate at lower
voltage with good
performance,
reducing active
...








Dramatic performance gain at low operating
voltage, better than Bulk Planar transistor
37% performance increas...
The primary challenges to integrating non planar trigate devices into conventional semiconductor
manufacturing processes i...
The new chip technology, called tri-gate transistors,
replaces flat, two-dimensional streams of transistors
with a 3D stru...
[1] Isabelle Ferain, Cynthia A. Colinge & Jean-Pierre Colinge,
“Multigate transistors as the future of classical metal-oxi...
3D or Tri-gate transistors
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3D or Tri-gate transistors

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3D or Tri-gate transistors are multigate transistors having gate wrapped on three sides of conducting channel of electrons.

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3D or Tri-gate transistors

  1. 1. By Karanvir Singh 10105EN065
  2. 2. • • • • • • • • Introduction to 3D transistors Need for 3D transistors Operation Comparison with 2D transistors Advantages Applications Conclusion References
  3. 3. 3D transistors employ a single gate stacked on top of two vertical gates allowing for essentially three times the surface area for electrons to travel, without increasing the size of the gate. The Gate is the terminal that drives the transistor on and off, and acts like a capacitance where charge is stored making the channel conductive. When the gate is charged, it creates an inversion layer between the Source and the Drain, where electrons can flow.
  4. 4.  The number of transistors on an integrated circuit doubles approximately every two years which is achieved by scaling down the transistor size.
  5. 5.       Silicon-only planar transistors are fast approaching their scaling limit. Short channel effects limiting scaling into sub nanometer regime. Oxide thickness cannot be scaled down further, problems of tunneling. Need to keep Silicon technology as the base technology while innovating future devices; cost is an important factor. Performance and power dissipation need to be improved. Smaller is faster !!
  6. 6. Planar MOSFET Scaling (Short-Channel Effect) Lg = 0.35 m, Tox = 8 nm Lg = 0.18 m, Tox = 4.5 nm Short-Channel Effect Short-Channel Effect Lg = 0.10 m, Tox = 2.5 nm Lg = 0.07 m, Tox = 1.9 nm 6
  7. 7. a. DIBL (Drain Induced Barrier Lowering) effect shifts the characteristics to the left when VD is increased. b. S increases when the channel length is decreased.
  8. 8. 3D or Tri-Gate transistors form conducting channels on three sides of a vertical fin structure, providing “fully depleted” operation and tighter control on the channel. Tri-gate transistor
  9. 9. The additional control enables as much transistor current flowing as possible when the transistor is in the 'on' state (for performance), and as close to zero as possible when it is in the 'off' state (to minimize power), and enables the transistor to switch very quickly between the two states (again, for performance) due to improved sub-threshold slope and increased inversion layer area provides higher drive currents.
  10. 10. Transistor characteristics Planar MOSFET
  11. 11.   Steeper subthreshold slope that reduces leakage current. Better switching operation.
  12. 12. The steeper sub-threshold slope can also be used to target a lower threshold voltage, allowing transistors to operate at lower voltage to reduce power and/or improve switching speed.
  13. 13. 2D vs. 3D transistor  22 nm 3D Tri-Gate transistors can operate at lower voltage with good performance, reducing active power by >50%
  14. 14.     Dramatic performance gain at low operating voltage, better than Bulk Planar transistor 37% performance increase at low voltage >50% power reduction at constant performance Improved switching characteristics (On current vs. Off current) Higher drive current for a given transistor footprint implies better performance More compact hence enabling higher transistor density which translates to smaller overall microelectronics.
  15. 15. The primary challenges to integrating non planar trigate devices into conventional semiconductor manufacturing processes include:  Fabrication of a thin silicon "fin" tens of nanometers wide  Fabrication of matched gates on multiple sides of the fin
  16. 16. The new chip technology, called tri-gate transistors, replaces flat, two-dimensional streams of transistors with a 3D structure. The technology will allow manufacturers to create transistors that are faster, smaller and more powerefficient which will be used in the next generation of desktops, laptops and mobile chips. Tri-Gate transistors are an important innovation needed to continue Moore’s Law.
  17. 17. [1] Isabelle Ferain, Cynthia A. Colinge & Jean-Pierre Colinge, “Multigate transistors as the future of classical metal-oxide semiconductor field effects transistors”. [2] Aniket A. Breed/ Dr. Marc Cahay, “Design and Evolution of modern SOI fully-depleted MOSFETs”. [3] Jack Kavalieros, Brian Doyle, “ Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates”. [4] Viranjay M. Srivastava, Setu P. Singh, ”Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate”. [5] http://en.wikipedia.org/wiki/Multigate_device [6] http://www.intel.com/content/www/us/en/energy/intel22nm-3-d-tri-gate-transistor-technology.html
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