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Electrically pumped
hybrid AlGaInAs-silicon evanescent laser

                  Jehona Salaj

         University of Eastern Finland
       Department of Physics and Mathematics

              November 13, 2012




              Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Hybrid integration
III-V lasers coupled to silicon waveguides.




                        Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Hybrid integration
III-V lasers coupled to silicon waveguides.




                        Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Outline



   1   Introduction


   2   Structure


   3   Experiments and results


   4   Conclusion




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Outline



   1   Introduction


   2   Structure


   3   Experiments and results


   4   Conclusion




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Introduction

   Previous approaches
        Raman lasers
       Raman amplifiers
       nano-patterning
       nanocrystalline-Si structures
       doping silicon rich oxides with rare earths




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Introduction

   Previous approaches
        Raman lasers
       Raman amplifiers
       nano-patterning
       nanocrystalline-Si structures
       doping silicon rich oxides with rare earths

   Limitations
        Optical pumping
       Work at cryogenic temperatures




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Introduction

   Previous approaches
        Raman lasers
       Raman amplifiers
       nano-patterning
       nanocrystalline-Si structures
       doping silicon rich oxides with rare earths

   Limitations
        Optical pumping
       Work at cryogenic temperatures

   Solution
   Electrically pumped hybrid AlGaInAs-silicon laser - waveguide
   structure which works at temperatures up to 40◦ C

                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Outline



   1   Introduction


   2   Structure


   3   Experiments and results


   4   Conclusion




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Structure




   Figure : Schematic drawing of the structure of the laser. Optical mode
   superimposed.


   Optical mode overlaps 75% with the silicon waveguides and 3%
   with the quantum wells.


                            Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Structure




   Figure : Electron microscope image of the cross section of a fabricated
   hybrid AlGaInAs-silicon evanescent laser.




                             Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
New possibilities




   Figure : Schematic drawing of an integrated silicon transmitter photonic
   chip with multiple electrically driven lasers operating simultaneously, all
   fabricated with a single bonding step. They are all self aligned to silicon
   modulators and then all combined together with a silicon multiplexer.



                              Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Outline



   1   Introduction


   2   Structure


   3   Experiments and results


   4   Conclusion




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Parameters




   Figure : The output power for one side coupling with a fiber plotted
   against current for different temperatures.


                            Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Parameters




      laser threshold 65mA
      maximum output power 1.8mW
      maximum lasing temperature 40◦ C
      waveguide-fiber coupling loss 6dB
      differential quantum efficiency 12.7%
      threshold voltage 2V
      series resistance 7.5Ω




                         Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Spectrum




           Figure : Spectrum of the laser above the threshold.



                          Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Limitations
     Poor heat extraction from the active region
    Heat generation by the high electrical series resistance of the
    thin n-layer

Possible improvements
     Reduction of the buried oxide thickness to lower the thermal
     resistance
    Narrowing the n-contact distance from the center of
    waveguide to reduce electrical series resistance
    Deposition of high reflection coatings onto the waveguide
    facets to reduce the threshold current
These improvements should make it possible to reach the 70◦ C
requirements of commercial transmitters.

                        Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Figure : Infrared image of 7 lasers operating simultaneously taken from
one of the facets.



                          Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Outline



   1   Introduction


   2   Structure


   3   Experiments and results


   4   Conclusion




                           Jehona Salaj   Electrically pumped hybrid AlGaInAs-silicon evanescent laser

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Laser

  • 1. Electrically pumped hybrid AlGaInAs-silicon evanescent laser Jehona Salaj University of Eastern Finland Department of Physics and Mathematics November 13, 2012 Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 2. Hybrid integration III-V lasers coupled to silicon waveguides. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 3. Hybrid integration III-V lasers coupled to silicon waveguides. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 4. Outline 1 Introduction 2 Structure 3 Experiments and results 4 Conclusion Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 5. Outline 1 Introduction 2 Structure 3 Experiments and results 4 Conclusion Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 6. Introduction Previous approaches Raman lasers Raman amplifiers nano-patterning nanocrystalline-Si structures doping silicon rich oxides with rare earths Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 7. Introduction Previous approaches Raman lasers Raman amplifiers nano-patterning nanocrystalline-Si structures doping silicon rich oxides with rare earths Limitations Optical pumping Work at cryogenic temperatures Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 8. Introduction Previous approaches Raman lasers Raman amplifiers nano-patterning nanocrystalline-Si structures doping silicon rich oxides with rare earths Limitations Optical pumping Work at cryogenic temperatures Solution Electrically pumped hybrid AlGaInAs-silicon laser - waveguide structure which works at temperatures up to 40◦ C Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 9. Outline 1 Introduction 2 Structure 3 Experiments and results 4 Conclusion Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 10. Structure Figure : Schematic drawing of the structure of the laser. Optical mode superimposed. Optical mode overlaps 75% with the silicon waveguides and 3% with the quantum wells. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 11. Structure Figure : Electron microscope image of the cross section of a fabricated hybrid AlGaInAs-silicon evanescent laser. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 12. New possibilities Figure : Schematic drawing of an integrated silicon transmitter photonic chip with multiple electrically driven lasers operating simultaneously, all fabricated with a single bonding step. They are all self aligned to silicon modulators and then all combined together with a silicon multiplexer. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 13. Outline 1 Introduction 2 Structure 3 Experiments and results 4 Conclusion Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 14. Parameters Figure : The output power for one side coupling with a fiber plotted against current for different temperatures. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 15. Parameters laser threshold 65mA maximum output power 1.8mW maximum lasing temperature 40◦ C waveguide-fiber coupling loss 6dB differential quantum efficiency 12.7% threshold voltage 2V series resistance 7.5Ω Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 16. Spectrum Figure : Spectrum of the laser above the threshold. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 17. Limitations Poor heat extraction from the active region Heat generation by the high electrical series resistance of the thin n-layer Possible improvements Reduction of the buried oxide thickness to lower the thermal resistance Narrowing the n-contact distance from the center of waveguide to reduce electrical series resistance Deposition of high reflection coatings onto the waveguide facets to reduce the threshold current These improvements should make it possible to reach the 70◦ C requirements of commercial transmitters. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 18. Figure : Infrared image of 7 lasers operating simultaneously taken from one of the facets. Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser
  • 19. Outline 1 Introduction 2 Structure 3 Experiments and results 4 Conclusion Jehona Salaj Electrically pumped hybrid AlGaInAs-silicon evanescent laser