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Microelectronics: Russian Landscape & Global Trends

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Macroeconomic and technology factors are going to influence the development of microelectronics in Russia. The market is going through a transitional period, and the landscape is adapting to a new …

Macroeconomic and technology factors are going to influence the development of microelectronics in Russia. The market is going through a transitional period, and the landscape is adapting to a new reality.

Today, the global electronics industry has almost reached the bottom of the three-year downturn. Taking into consideration the cyclic economy processes for this industry (one cycle in about five to eight years), we can expect that the next two years will be the most favourable for the industry recovering in Russia.

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  • 1. Microelectronics: Russian Landscape & Global Trends Presented by Ankit A. Shukla Practice Director, Technical Insights (Europe) March 27th 2013© 2013 Frost & Sullivan. All rights reserved. This document contains highly confidential information and is the sole property ofFrost & Sullivan. No part of it may be circulated, quoted, copied or otherwise reproduced without the written approval of Frost & Sullivan.
  • 2. Our Presenter Today Experience and Expertise • Extensive experience working with global and regional organizations (private and public) providing guidance on key strategies related to technology, innovation and business development • Particular expertise assisting R&D and strategy teams in leading companies with the development and implementation of their growth strategies in: - Technology strategy developmentAnkit A. ShuklaPractice Director, - Innovation and Intellectual Property managementEurope - R&D and Innovation Planning/Policy/Technology CostsTechnical Insights - Future R&D focus/strategic partnership development • Experience base covering broad range of sectors and technologyFrost & SullivanGlobal clusters including Microelectronics, Energy, Aerospace, Defence,Oxford, UK Automation, Materials, ICT, Healthcare etc. Education • MS in Control Systems from University of Sheffield (Sheffield, UK) • B.Eng in Instrumentation & Control Engineering from Gujarat University (India) 2
  • 3. Agenda1. Global overview of microelectronics2. General macroeconomics in Russia3. Microelectronics in Russia i. Current situation ii. Trends iii. Interesting findings4. Related Technology/Innovation Developments5. Frost & Sullivan research6. SEMICON Russia 2013 3
  • 4. Semiconductor Industry - Overview Materials Automotive Semiconductor Materials Power Train Silicon Safety Systems Compound Semiconductor Materials Body Electronics S.I. GaAs, S.C. GaAs, Sapphire LED, Sapphire SoS, S.C. SiC, S.I. SiC, Bulk GaN, InP Driver Assistance Entertainment and Infotainment Systems Products ApplicationsSemiconductor Industry Computer Analog IC Communications Renewable Discretes Energy Desktops Wireless Communications DSP Solar Notebooks Wired Communications Logic Wind Servers RF Power Amplifiers & Memory Energy Peripherals Transceivers Microcontrollers Microprocessor Consumer Military & Aerospace Optoelectronics Industrial Consumer Video Sensors & MEMS Consumer Audio Timing Devices Test & Measurement Process Control Portable Media Players Personal Electronics Healthcare Electrical Test Manufacturing Controls Appliances Electronic Test Inventory Systems & Home Medical Electronics Handheld Test Billing Controls Imaging Medical Electronics ATE Building Controls Clinical Medical Electronics Communications Test 4
  • 5. The Global Semiconductor Market Worth US$ 320.4 Billion in 2012*Global Semiconductor Market Size – Breakdown of Consumption by Region RUSSIA • In 2012 the Russian semiconductor market is expected to be valued at US$ <1% of the 2.2 billion. With new initiatives and world market Mega Trends in the global Industry and in its optimistic scenario, F&S forecast that by 2018 the market could total 12.1% of the US$9.9 billion 17.2% of the world market world market 15.3of the EUROPE world market 54.7% of the AMERICAS • After a brief slowdown, in world market • Sales of semiconductors are 2010 the European concentrated in the North America, semiconductor market particularly in the US expanded by 27%, totalling • In 2011, North American US$ 38.6 billion semiconductor market grew by JAPAN 40.7%, the highest regional growth, • Following a difficult 2009, reaching US$ 54.2 billion ASIA PACIFIC the Japanese • The semiconductor market has semiconductor market risen by 35% amounting US$ amounted to US$ 49.0 175.3 billion billion in 2010, 21.1% • China’s demand for industrial year-on year growth and automotive ICs was among the key growth drivers*Source: World Semiconductor Trade Statistics, IC Insights, Frost &Sullivan analysis 5
  • 6. Semiconductor Market in 2012* – Snapshot COMMUNICATIONS C O M P U C T O E N R S S U M E R Total semiconductor revenue for 2012 stood at 320.4* billion *Note: Revenues mentioned here are market estimates 6
  • 7. Seven Distinctive Semiconductors Manufacturing Hubs in the World World Map of Manufacturing Hubs JAPAN • Home base for several CHINA semiconductor majors – Sony, • Agglomeration of assembly and test Toshiba, Renesas, Elpida (both facilities due to economies of scale wafer fabrication as well as EUROPE and cost-advantages assembly and testing facilities) • Semiconductor clusters around Grenoble • Growing foundry business to serve • The industry faces ever-increasing (France), and Dresden (Germany) booming domestic demand – ICs competition from South Korean and • Wafer fabs, R&D and design centres from for consumer electronics, industrial Taiwanese rivals. STMicroelectronics, NXP, Infineon, etc. and automotive sectors • Trend towards decreasing the number of fabs due to high upgrade costs and foundry outsourcing instead SOUTH KOREA • Place of origin for two of the world’s largest semiconductor companies – Samsung and Hynix, bothUS with further plans for• Wafer fabrication and R&D centres expansion concentrated in Texas and TAIWAN California • A foundry service centre of the ASIA PACIFIC• Intel, Texas Instruments, Samsung world – Taiwan • A number of major Western and Japanese and Freescale continue to expand in Semiconductor Manufacturing semiconductor companies located their test and the US due to established industry Company (TSMC) and United assembly facilities in Malaysia and Philippines ecosystem in place. Microelectronics Corporation • Singapore - wafer fabrication facilities from STM, NXP and Micron (UMC). Source: Frost &Sullivan analysis 7
  • 8. Evaluation of Current Business Models • Capital and operational expenditure required • Envisaged return on investmentEvaluation • Innovation focus criteria • Global competitive landscape in semiconductor industry • International best-practices and trends IDM Fab-Lite Fab-Less FoundryBenefits • Full product life-cycle in- • Eliminates the need for • Higher ROI: industry • State-of-the-art house CAPEX in advanced average gross margin ~50% manufacturing manufacturing capacity • Lower CAPEX: design • Economies of scale • Allows to combine both costs of 45nm SoC ~$80 manufacturing and stronger million R&D focus. • Extremely high CAPEX and • Drives innovation OPEX: 300mm fab start-up • Shorter time-to-market costs ~$2.5-3bn for 90-65nm, • Suitable for smaller and ~$3.5-4.5 bn for 45-32nm.Risks • Capital intensive, leading- • The need to sustain existing edge technology fabs at profitable levels (high start-up companies • R&D costs for process utilization rate) technology: ~$0.6-0.9bn for • Volume of production and • Dependency on foundries 45-32nm, ~1.3bn for 22nm breadth of operations should and associated risks; • Lower ROI (industry average justify owning a fab • IP protection importance gross margin ~20-30%) • The business model per se • A transitional model towards • The most favourable • Modern foundry requiresConclusion is waning; existing IDMs fabless business business option to pursue in extra-orbitant investment, should be viewed as Examples: the current semiconductor offers smaller returns potential technology • IBM and Renesas: moving environment: from • Consolidation and regional partners rather than a to fab-lite, R&D-heavy; will innovation standpoint, concentration in the industry business model to pursue never built a major fab again business-wise 8
  • 9. Microelectronics Capability Requirement for Russia Robust Public-Private Framework • Globally, semiconductor industry has evolved due to successful cooperation between public and privateCapital and Land institutions – governmental bodies, R&D institutes, business investors. Effective Transportation/ Logistics• Russia boasts no shortage of land mass for manufacturing expansion • In particular, Russia must encourage and facilitate • Both semiconductor and electronics as opposed to, for example, Taiwan commercialization of innovations by large number of manufacturing rely heavily of effective or South Korea – both countries start-ups and R&D centres in the country. logistics system – Russia is also prone to earthquake impacts advantageous on the cost side, however Capital and Effective a lot yet to be done in terms of efficiency. as a stability concern for the industry. land transportation • On a flip side, advances in / logistics microelectronics can help solving some• Government’s support of microelectronics development, we of the pressing issues in transportation believe, also signifies readiness to (RFID tagging, satelite navigation, stolen provide capital funding. Robust vehicles tracking). Public-PrivateTechnical and Managerial Tax and Tariffs FrameworkCompetence • Semiconductor industry remains• Russian has good technical sensitive about various policy issues. The education, with proper training in Government must create the right Technical and incentives for investment by revisiting its microelectronics its graduates could become a potent driving Managerial policy for tax and import/export duties, in force behind the industry growth. Competence Tax and Tariffs order to become competitive on a world stage.• More is to be done in terms of developing managerial • Creation of economic zones with competencies. preferential treatment as Zelenograd or Skolkovo is a welcoming step forward. 9
  • 10. Opportunity for Russia on the Global Microelectronics Stage Medical Growing demand ICT Smart grids devices for microelectronics Automotive Navigation Others from developing The right timing industries Rail RFID given the market’s normal demand cycles Russia could be Global strategic hub for CEE supplying microelectronics CIS The The Russianopportunity Government is for Russia advocating full is defined support by … The ability to Experience with engage in a 90nm tech partnership to provides solid address foundation weaknesses 10
  • 11. Partnership Requirement Evaluation • Semiconductor industry worldwide can be characterized by two seemingly contradictory aspects – intense rivalry and breadth of collaboration across various levels. Key Insight • That is, in order to succeed in such an environment, a company/country cannot afford to stay isolated, the need to open up the business and partner search is vital. • Speaking to and cooperation with your customers – the way for semiconductor companies to succeed these days. Examples: Customer • Strategic alliances with customers as part of STM’s business strategy: Magnetti Marelli (Italian producer of automotive partnership electronics), LifeNexus (US, personal eHealth-card), Arad (Israeli smart water meters manufacturer), consumer electronics and telecoms – Alcatel-Lucent, Bosch, HP, Nokia, Pioneer, etc. • Despite intensive rivalry among leading semiconductor companies, close cooperation is all too common. In particular, in the areas of joint R&D aimed at bringing ever-rising costs down and sharing the risks. Joint Examples:Development • Crolles2 (2002-2007, France): STM, NXP, Freescale, Toshiba and others – joint collaboration to develop CMOS logic chips at Agreement 45nm and 300mm wafers. (JDA) • IBM Alliance (ongoing, US): IBM, Samsung, GlobalFoundries, STM, etc. – R&D at <28nm process nodes. • One of the first major obstacles any newcomer on a semiconductor stage faces is a lack of trained industry professionals. Hence, human resources development with an assistance of experienced partner is necessary. Examples:Human capital • Advanced Technology Investment Company (Mubadala Group, GlobalFoundries’ owner) signed a deal with Singapore transfer Polytechnic to train wafer fabrication technicians for a planned 300mm fab in Abu-Dhabi. • Brazil IC Project: 20 Brazilian semiconductor engineers will receive training at Toshiba’s facilities in Kawasaki. • In a semiconductor world, competition is often defined not only at the company but also at the country level. Examples: • Facing tough challenge from the South Korea (i.e. Samsung and Hynix), leading Japanese memory producer – Elpida, reached Inter-state an agreement with Taiwan’s Powerchip Technology in a deal which was immediately dubbed as “Taiwan and Japan vs. South rivalry Korea” (February 2011). More of the same is expected to follow. • Experts also voice opinion for India and China to join forces for them to succeed in semiconductor industry: the former has excelled in IC design while the latter is a major manufacturing hub. 11
  • 12. Partner Evaluation Criterion ✔ Current exposure in Russia Company’s presence in Russia, including non-microelectronics businesses, in particular – availability of manufacturing capacities or R&D centres ✔ Political and economic relations Major semiconductor corporations are the beacons of their homeland’s technological and economic prowess; cooperation with such firms usually involves senior government officials and evolves within a framework of wider intergovernmental relations. For example, Brazil’s engagement with Toshiba in the field of microelectronics was initiated at Brazil-Japan talks; Intel’s Chairman personally flew and met with Israeli Prime-Minister to discuss potential investment into new fab. ✔ Product focus Relevance of the company’s product portfolio to the domestic microelectronics demand in Russia is crucial. For example, partnering with a company which solely produces memory ICs or chipsets for mobile communications is less attractive due to lack of internal demand ✔ Investment outlook That is company’s on-going, large-scale investment projects elsewhere would make commitment to a significant project in Russia less likely ✔ Business model and strategy For example, foundries are less attractive for knowledge sharing and technology transfer agreements ✔ Other Collaboration history, experience/willingness to operate in the emerging markets’, past technology transfer agreements, cooperation with government bodies 12
  • 13. Existing Global Companies’ Prospective Interest in Russia • This is a preliminary analysis which allows to perform top-level assessment of the Key potential partners. Insight • The criteria can be used as a framework for further in-depth evaluation of strategic partnership options, including beyond the Top-20 semiconductor company list. Freescale Fujitsu/ Texas STMicroelectronics Samsung Infineon/ NXP Semiconductor Instruments • Previous track record • Large exposure in • Ongoing R&D • Business proximity • Attractive product of collaboration on the Russian market: Russia – cooperation with Europe. focus: Fujitsu – 90nm project. LCD assembly plant with Moscow • Attractive product automotive • Company’s interest in in Kaluga, LG and Institute of Electronic focus: smart cards, microelectronics, TI cooperation, as Samsung R&D Technology. ICs for automotive – industrial expressed at Rusnano centres, brand • Attractive product and industrial applications. Forum, November 2010 recognition, etc. focus: industrial,Benefits applications. • Attractive product • Strong ties with automotive, energy focus: smart metering, South Korea – Mr. and lighting, smart cards, LED Medvedev’s visit in healthcare. drivers, automotive. November 2010, • Experience in the • $1.1-1.5bn CAPEX for promoted 40-year emerging markets – • Infineon – previously • Texas Instruments - 2011, healthy financial gas deal, Hyundai R&D centre in failed attempt to brownfield results in 2010. among the largest Mexico. acquire the investment strategy automotive investors. company; $750m (acquisition of 2 fabs upgrade of existing in Japan and 1 in facilities in Austria China), expansion in Restraints • Financial losses at ST- • Large ongoing • The company filed and Malaysia. Asia. Ericsson joint venture, investments: for an IPO with SEC • NXP - $3.7bn debt • Fujitsu – the restructuring $10.7bn in Korea, in an attempt to burden, $406m net restructuring after $3.6bn in Texas. cover its $7.6bn debt loss in 2010, 2008 spin-off, huge • Product focus: (February 2011). restructuring after an financial losses and consumer • Closure of 2 fabs. IPO in 3Q of 2010. workforce cut in electronics, memory. 2009. 13
  • 14. Inputs into the Microelectronics Market in Russia1. We believe that there is an opportunity for Russia to be established as a manufacturing hub in the global micro-electronics industry.2. Given the industry’s demand cycles and given the lead-time for Russia to move from planning to execution, there is a limited window-of-opportunity.3. There is a tendency for specialisation (fabless/ fab-lite vs. foundry), rather than implementation of an end-to-end (IDM) business model.4. Irrespective of the business model, countries wishing to be established as a global hub need to develop a powerful value proposition based on an holistic ecosystem.5. For the strategy to be successful, partnerships at several levels are required – a technology-focused approach is insufficient.Having a clear strategy based on these points PRIOR to engaging potential partners is critical. 14
  • 15. 3D Integration 15
  • 16. 3D Integration--Introduction, Trends, and Importance The emergence of high-performance digital consumer electronics is pushing electronics manufacturers to rapidly increase performance and capabilities of their products in order to stay competitive in the market. Customers want their systems not only to offer supreme performance and new features, but also requireIntroduction small size and long-battery operation time. Hence, electronic industry is constantly looking for technologies to support the trend for more powerful and functional devices in small form factor and low-energy requirements. And with the traditional 2D technologies reaching technological and economical limits, 3D integration is seen as a solution to meet these demands. The 3D integration refers to a variety of technologies allowing for multiple conventional device layers to be stacked and electrically interconnected. The concept has been widely commercialized in the form of 3D packaging technology, but in order to satisfy the high bandwidth demands of future multifunctional, Current heterogeneous systems, the industry is developing more sophisticated solutions. A number of companies Trend are investigating means of incorporating through-silicon via a vertical interconnection that passes through silicon (Si) die to provide electrical connection between different layers in 3D IC stack, in commercial applications. Chip vendors are facing surging design and manufacturing costs due to increasing complexity of new devices. There are many ways, in which 3D integration can bring new opportunities and benefits for electronic industry. Stacking of multiple active layers can significantly enhance the performance of the chip,Why 3D IC? reduce its power consumption, and ensure small form size. The 3D domain offers give designers flexibility to combine heterogeneous devices of disparate types in a single chip. This will allow for more powerful and functional devices, such as stacking processor unit with memory. Source: Frost & Sullivan 16
  • 17. Key Technologies For 3D Integration The 3D integration refers to technologies for vertically stacking a number of electronic components and connecting them with vertical interconnects. The concept has been first brought to market in the form of 3D packaging techniques, which allowed for significant reductions in area, speed, and power usage of the device. Through-silicon vias integration is a novel underlying technology for 3D ICs, which can offer further advantages in performance, speed, and functionality. 3D Packaging Wafer-Level Integration 3D On Chip Short-Term Horizon Medium-Term Horizon Long-Term Horizon (1-2 years) (2-10 years) (>10 years)• Well established technology with a large • 3D integration realized at wafer level to achieve • 3D integration at the device level to build the number of players and applications in the high-interconnect density is a promising chips themselves in three dimensions. market. technology for electronic industry. • Aimed for most performance demanding• Based on generic, high-yielding packaging, • Multiple TSV (through-silicon-vias) based applications. and interconnection technologies. technologies are examined for commercial use. • Requires developing design methodologies• Lower investment and operating costs than • Industry is working toward developing cost- and fabrication processes. competitive 3D technologies. effective, high-yielding fabrication processes. • The 3D IC technology is still in the R&D and• Relatively low 3D interconnects density. • Design constraints still exist, such as TSV layout, there are still technology roadblocks to be thermal management, and electrical coupling. addressed before it is commercialized. 17
  • 18. 3D Integration Technology--Strengths and Limitations Cost-effective alternative to Enabling new applications Low energy the limitations of traditional and features. Capable of Improved performance, consumption. Well interconnect technology integrating multiple massive bandwidth, small suited for mobile, and costly advanced functionality in a single form factor consumer electronics lithography-based chipStrengths Strengths processesLimitations Limitations Cost and yield constraints Technology challenges in Lack of standards Design challenges and of 3D integration terms of reliability, density, and dedicated thermal management. Lack processes. Industry must and performance supply chain of methodology and EDA develop repeatable and tools for design and cost effective verification processes manufacturing processes Source: Frost & Sullivan analysis 18
  • 19. Emerging Applications3D integration enables heterogeneous integration of chips of CMOS Sensors • Increaseddifferent functionalities and wafer technologies in single Functionalitysystem. Integrating several layers of functional components Memory Stackingoffers advantages of low-power requirements and highly • Decreased Totalimproved functionality without increasing the size of the chip. Logic + Memory AreaTechnology with the biggest potential for the future 3D chips FPGA • Low Poweris through-silicon vias. Strong backing from the key industry Requirementsparticipants coupled with significant technology Analog • Shorteradvancements in the recent years has allowed TSV-basedchips to enter the commercial market. IC and MEMS Interconnect Delays 3D Opto- Memory on Logic Electronic Integration Wide-Bandwidth Memory Stacking Interposers Heterogeneous Memory 3D IC Stacking CMOS Logic Die Image Partitioning Sensors 2011 2013 >2015 Source: Frost & Sullivan 19
  • 20. Emerging Memory Technologies 20
  • 21. Industry Scenario Overview • There has been persistent demand for high density, low cost, low power, and high-performance data storage devices attributed by end-user’s ever growing need for more memory. • Storage capacity of devices such as hard disk drives and flash drives are constantly enhanced; solid state drives with NAND flash memory are gaining momentum. Magnetoresistive • While CDs and DVDs are currently the most popular low-cost storage device, Blu-Ray discs though RAM attributed by high-storage capacity are expensive and not widely adopted. Technologies, such as, holographic technology are capable of offering high-storage densities, but it is still in the development stage. • To effectively address the challenges associated with certain existing and emerging data storage Phase technologies, researchers are investigating new memory technologies such as magnetoresistive random Change access memory (MRAM), nanotechnology-based memory (NRAM), phase change (PCM/PRAM) and Memory ferroelectric memory (FRAM).Technologies Trends • MRAM is gaining momentum; and with improvements in performance and density, MRAM can be used for Ferroelectric data storage applications (solid-state drives). High speed, high capacity, non-volatility are the key attributes Memory that make MRAM a candidate of choice compared to other emerging memory technologies. With spin- transfer-torque-write MRAM and toggle MRAM considered as alternate switching mechanisms to conventional MRAM, spin-transfer-torque-write MRAM is gaining attraction in the recent years, due to its low-power consumption and enhanced scalability over conventional MRAM. Nanotechnology • Ferroelectric memory is characterized by high-access speed, high endurance in write mode, low-power -Based Memory consumption, non-volatility, and excellent mechanical resistance. Such memory finds potential use in smart cards, where high security and low-power consumption features are desired, as well as in cellular phones and other applications such as data storage devices. • PCM/PRAM is attributed by high endurance and enhanced scalability; PRAM may be considered in Emerging Memory computer memory as well as in data storage systems/solid state drives in the long term. Technologies • Nanostructures such as CNTs are evolving to be potential data storage technologies due to their enhanced scalability and storage capacity. 21
  • 22. Stakeholders and Development Efforts MRAM Automotive Stakeholders Medical Diagnostics and Biotechnology RAID; Aerospace Everspin; Micron Spingate; NASA Storage Systems MRAM– Crocus;QuantumWise ST Microelectronics Potential Cognitive Applications Computing Defense TSMC; NVE; Singulus Toshiba; Hynix; IBM Samsung; MagSil Honeywell; Spintec Space Industrial Automation/ Smart Metering Activities• Everspin is developing MRAM chips catering to the needs of different markets. Company sources claim to have shipped over 4 million MRAM chips till date (units Key Trends commenced shipment in 2011), and anticipate to produce more in 2012. They claim to have over 300 customers and 100 products in the market. The company is a key provider of spin transfer torque MRAM.• Samsung Electronics acquired Grandis (a key developer of spin transfer torque (STT) MRAM)• Toshiba and Hynix have entered into joint development agreement to develop Co-development efforts to commercialize products. commercial MRAM (STT-MRAM) and these companies have exchanged their patent cross licensing and product supply agreements toward development. Collaborative Acquisition to enhance development efforts. efforts has been observed between Micron Technology and A*STAR; and Crocus Cross licensing of patents for joint development and IBM. New applications are explored. 22
  • 23. Stakeholders and Development Efforts Ferroelectric Memory Ferroelectric Memory–Potential Applications Stakeholders Space Ramtron; Symetrix Fujitsu; Rohm Medical Industrial Consumer Texas Instruments Infineon; NASAAutomotive Electronics/Controllers Printed Electronics Thin Film Electronics Samsung; Toshiba Smart Meters Aerospace and Defense Smart Cards Hynix; PARC Panasonic Activities• SilTerra Malaysia Sdn Bhd (SilTerra) and Symetrix entered into a collaboration to Key Trends offer FRAM memory products (as standard memory offering). The partnership is expected to enable production of new products for smart applications.• Fujitsu has extended its ferroelectric memory product portfolio that can provide flexibility for consumer and industrial applications (by expansion in voltage range designed to improve logistical and operational efficiency while reducing component cost). Collaborative efforts to develop new products and enable• Research efforts have been driven toward developing ferroelectric memory on plastic new applications. substrates. Thin Film Electronics ASA and Palo Alto Research Center (PARC) have Efforts to enhance commercialization. developed a printed prototype of non-volatile ferroelectric memory. This Research and development activities for developing development will enable production of roll-to-roll printable memory for ferroelectric memory on plastic substrates . Internet-of-Things. 23
  • 24. Stakeholders and Development Efforts PCM/PRAM Stakeholders Automotive Micron Ovonyx PCM/PRAM– IBM; Intel Samsung Potential Applications Hitachi Renesas Consumer electronics Aerospace Radiation sensitive; space; defense Activities Key Trends• Researchers from the University from California, San Diego, along with Micron Technology, BEEcube, and Xilinx have developed a PCM-based solid state storage device (SSD) which is attributed by improvements in speed over current SSD technology.• IBM engineers have demonstrated PCM that can store data for longer periods and this can lead to reliable, fast, and low-cost solid state chips that can perform better than flash memory chips. Persistent efforts to improve the performance of the PCM to move closer toward demonstration and• Researchers from University of Illinois Urbana-Champaign have identified a way to commercialization. minimize the volume of material used in the memory thus reducing the power requirement compared to conventional devices. The research team has used CNTs Joint development efforts to realize commercial for the proposed approach. products. 24
  • 25. Stakeholders and Development Efforts Nanotechnology-Based MemoryNanotechnology-Based Memory–Potential Applications Stakeholders Networking Nantero NASA University of ASTAR California, Riverside Consumer Space electronics Georgia Institute of NIST Technology IBM Politecnico di Milano Aerospace & Defense Activities• Nantero develops CNT-based memories intended for a broad spectrum of Key Trends applications. The company has partnered with organizations such as, Lockheed Martin, ON Semiconductor, Brewer Science, HP, SVTC Technologies, ASML, and LSI Logic or development. The company is strengthening its patent portfolio.• Researchers from the Georgia Institute of Technology have developed piezoelectrically modulated resistive memory (PRM) devices that are based on zinc oxide nanowires. The technology can be utilized for developing nano- Investigation of different nanostructures for use as electromechanical systems on a single chip, and can be employed for various applications that demand high performance. Similarly, there are research activities memory device. that focus on leveraging nanowires for storage applications. Improved development efforts in CNT-based memory.• Graphene nanoribbons are being investigated as memory chips. Still the technology is in the nascent stages of development. 25
  • 26. Compound Semiconductor 26
  • 27. Technology Snapshot Overview • Silicon MOSFETs have now approached a performance plateau, while cost of advancements has increased dramatically. Concurrently, next generation and emerging applications are demanding further substantial leaps in power conversion performance. Hence, to meet the new requirements of forthcoming applications, new materials and transistor structures are needed to fill this gap. Silicon • Using compound semiconductor materials, a new generation of electronic devices can be Carbide unleashed that combine the capability to handle higher powers with lower switching loss and higher operating frequencies, that could boost the efficiency of power inverters, while trimming their size and weight. • Benefits that would follow include better power supplies for computers and more efficient power conversion in solar converters and hybrid electrical vehicles. CompoundSemiconductor Gallium Materials Nitride Trends • Although, silicon carbide (SiC) FETs have emerged on the scene in the past 10 years to address these issues, they suffer from significant cost premiums due to limited quality material supply, as well as the intrinsic cost structure of the material. • Structurally, bulk gallium nitride (GaN) substrates have been prohibitively high-priced, Gallium requiring the use of hetero-epitaxial films. However, major substrates used for GaN epitaxy Arsenide until now, such as SiC or sapphire, have also been relatively expensive. • Gallium arsenide (GaAs) can operate at higher power levels than the equivalent silicon device thanks to a higher breakdown voltages. However, high power operation is limited due to the poor thermal conductivity of the material. Overall, GaAs offers a good balance of properties for a wide range of RF applications. 27
  • 28. Stakeholders and Development Efforts Silicon Carbide IT and consumer Automotive Stakeholders sectors Industrial Cree Inc., NC Semisouth Laboratories Transportation Applications Including Civil Aviation GeneSiC Semiconductor United Silicon Carbide SiC Application Healthcare Markets Rohm Arkansas Power and Medicine Military and Electronics International Defense TranSiC, Sweden acquired by Fairchild Shindengen Electric Motor Semiconductor Manufacturing Co., Ltd. Clean Technology Drives Trends• SiC Electronics adoption in industry is dependent on developing a reliable MOSFET that can challenge IGBTs.• Thyristors in the high-voltage range are expected to address power utility applications.• Mass volume applications, such as electric vehicles could be three to four years before commercialization.• Small companies, such as GeneSiC, SemiSouth, and United Silicon Carbide all have embarked on developing SiC-based JFETS and BJTs that will probably be commercialized in a couple of years.• Large tier companies have realized the potential of SiC-based devices and have also started developing products on their own, notable are Mitsubishi Electric, ABB, and so on.• Until recently, only SiC-based diodes were available commercially while the other SiC-based devices, such as MOSFETS, JFET, BJTS were in research stages. This changed with Cree Inc., and also Rohm Semiconductors announcing that they have started supplying samples of SiC MOSFETS developed by them to customers. 28
  • 29. Stakeholders and Development Efforts Gallium Nitride LED Stakeholders CATV/VSAT Automotive International EPC Corporation Rectifier High Power Applications UPS GaN Systems Inc. MicroGaN GmbH Electronics RF Electronics; Transphorm, Inc. EpiGaN, Hasselt Broadband Motor Control Applications Photovoltaic Inverter BeMiTec AG Nitek Inc. Trends• A diverse range of companies have been striving to bring the high temperature and voltage operation, switching frequency and efficiency GaN promises to the power electronics market.• SiC’s use in motor control applications by companies like Mitsubishi will also pave the way for GaN, if it offers the same performance at a lower cost.• GaN power electronics past, present and future business is inseparable to the LED industry. Today, the extensive developments of GaN-on-Si epiwafers fertilized both the LED and the power industry. Most of the epiwafer vendors are targeting these two segments with dedicated products and offers.• International Rectifier and EPC Corp are furthest ahead in the qualification stakes, as both have commercial GaN products available today. However, as they have not yet achieved full approval, sales are still relatively low for now. 29
  • 30. Stakeholders and Development Efforts Gallium Arsenide Radio Stakeholders Frequency ICs Satellite Cellular Skyworks Solutions RF Micro DevicesMilitary and GPSAerospace TriQuint Semiconductor GaAs Avago Technologies Application Markets WIN Semiconductors Microsemi Corporation Point to Point Radio VSAT Automotive Renesas Electronics Sumitomo Electric Radar Activities• RF GaAs devices are a key component in many handsets, including smartphones. They are also used for amplification in Wi-Fi networks and will soon enable communication between one machine and another. The market for the GaAs chips used in these established and emerging applications is fairly buoyant.• The most important driver of the GaAs RF IC market is the handset segment.• Recently, the development of new GaAs based devices is enlarging the market with associated high volume applications -- LEDs represent such devices. 30
  • 31. Want to Learn More About The Current Situation and DevelopmentPerspectives of Microelectronics in Russia? 31
  • 32. New in 2013: SEMICON Russia is Supported by: With the support of: With the participation of: Supported by: Department of RadioElectronics of the Ministry of Industry and Trade of the Russian MOSCOW CITY Federation GOVERMENT Represented by the Department of Science, Industrial Policy and Entrepreneurship 32
  • 33. Exhibition Profile SEMICON Russia is the most established event for the Semiconductor and PV Manufacturing Industry in Russia • 2700+ professional attendees in 2012 • (35% increase over 2011) • 30+ countries represented • 69% of attendees are from the Russian Federation • 63% represent management level • 100 exhibiting companies Read more in the SEMICON 2012 post show report http://www.semiconrussia.org/en/AboutInformation/PostShowReports 33
  • 34. Programs and Events in 2013 Microelectronics Market Conference Innovative technology and advanced manufacturing to support the Russian Industry’s growth and competitiveness. Presentation of Frost & Sullivan comprehensive research dedicated to Russian microelectronics market TechARENA I & II Presentation stage on the show floor Free access for all registered visitors SEMI Networking Reception 34
  • 35. Reserve your Tickets to SEMICON Russia General Contacts: SEMI Moscow SEMI Europe SEMI North America Alla Famitskaya Eva Weller Sales Office: +7 495 978 6291 Office: +49 30 303 080 770 Tel: 888.500.7364 (US toll free) Mobil: +7 926 223 9272 Email: eweller@semi.org Email: sales@semi.org Email:afamitskaya@semi.org http://www.semiconrussia.org/en/ 35
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  • 38. For Additional InformationChiara Carella Ankit A. ShuklaHead of Corporate Communications - Practice Director, Technical InsightsEurope, Israel, Africa Europe+44 (0) 207 343 8314 +44 (0) 1865-398687chiara.carella@frost.com ashukla@frost.com Bernard Weber Sales Director, Technical Insights Europe +44 (0) 207-343-8352 bernard.weber@frost.com 38