Toshiba America Electronic Components, Inc. Flash Memory

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Toshiba America Electronic Components, Inc. Flash Memory

  1. 1. Toshiba America Electronic Components, Inc. Flash Memory Fact Sheet Company Overview Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. Working closely with design engineers to navigate and define the ever- changing need for innovation, Toshiba Corp. (Toshiba) and its subsidiary in the Americas, Toshiba America Electronic Components, Inc. (TAEC), deliver value-added solutions with conviction, passion and artistry. Toshiba is committed to enabling product breakthroughs with advanced, reliable electronic components and responsive technical support. With seamless design and manufacturing of high-quality Flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoC/ASICs, digital multimedia and imaging products, microcontrollers and wireless components, Toshiba makes possible today’s leading cell phones, digital music players, cameras, medical devices, TVs, automotive electronics and more. Memory Business Unit Overview Toshiba has consistently led the way in developing non-volatile memory solutions, beginning as the principal innovator of NAND- and NOR-type Flash memory in the 1980s. Toshiba continues to be a NAND technology leader and offers a complete line of solid state drives, and removable and embedded NAND Flash memory solutions, including both Single-Level Cell (SLC) and Multi-Level Cell products. In addition, Toshiba offers Multi-Chip Packages (MCP) which integrate various memory technologies including NAND Flash, NOR Flash, Pseudo SRAM (PSRAM) and low power SDRAM in a single package to simplify layout and save valuable board space in cellular phones and other space-constrained mobile electronics devices. Innovation and Leadership Toshiba has made major investments in design and process technologies that enable the company to offer advanced memory products. Through its ongoing commitment to invest in future technologies, Toshiba will continue to provide advanced solutions to meet evolving customer needs. Notable milestones include: − more −
  2. 2. Toshiba America Electronic Components Flash Memory Fact Sheet Page 2 of 7 • Principal innovator of NAND and NOR Flash • World's second-largest NAND Flash memory supplier1 • 16Gb2 56nm NAND Flash achieves single-chip 2GB3 storage • MLC NAND in production at 56nm • Fab3, a joint venture of Toshiba and SanDisk, at Toshiba Yokkaichi works, is Japan's largest 300mm wafer fab in operation • Fab4, the industry’s largest NAND fab, is also a joint venture of Toshiba and SanDisk, and began to ramp mass production in December 2007. • Fab4 will employ cutting-edge 56nm process technology at start up and will gradually transition to 43nm technology starting from March 2008, transitioning to approximately 90 percent 43nm production by 1Q09. • Consistent semiconductor capital investments of approximately $2B annually • First to market with monolithic 16Gb 43nm SLC NAND. • First to introduce a 512GB 2.5-inch solid state drive. SLC NAND chips can read and write data at high speed, and offer high level reliability. With its 43nm process generation, Toshiba is now offering a selection of SLC NAND chips ranging in density from 512Mbits to 64Gbits, to meet diversifying applications. The enhanced SLC lineup offers support for mobile phones, office automation equipment and servers, all of which require high levels of read and write speeds and reliability. As the price per bit of NAND Flash has decreased with advances in MLC technology and small process geometries that enable greater storage density, NAND Flash has enabled a series of new markets. From its initial widespread use in memory cards for cameras, NAND Flash has now been widely adopted for use in audio players, USB Flash drives, portable media players, and mobile handsets, with new opportunities developing in camcorders, automotive applications and computing. In the computing market, emerging applications include NAND cache, hybrid drives and solid-state drives (SSD). Toshiba MLC NAND Flash offers the right mix of cost and performance to satisfy a wide range of today’s demanding storage requirements. As feature-rich electronic products drive the need for higher density data storage, system designers are increasingly turning to Toshiba MLC NAND storage solutions. Toshiba expects to continue an industry leadership role in the development of super-MLC technologies, such as 3-bit or 4-bit per cell solutions. The company has also announced R&D milestones for a three-dimensional memory cell array structure that enhances cell density and data capacity without relying on advances in process technology, and with minimal increase in the chip die size. Flash Memory Overview As the recognized pioneer in Flash technology, Toshiba was a principal innovator of both NOR- type and NAND-type Flash technology. Today, Toshiba continues development of both NAND and NOR Flash, and understands the unique advantages associated with each architecture. By offering both types of Flash memory, Toshiba is able to meet the needs of a vast array of applications. NOR Flash applications have typically been used for fast random access for code
  3. 3. Toshiba America Electronic Components Flash Memory Fact Sheet Page 3 of 7 execution in applications such as set-top boxes and mobile handsets, while high-density NAND Flash is preferred for digital consumer, solid-state storage applications and is quickly finding its way into traditional NOR applications such as mobile handsets for data storage and/or code storage as well. NOR technology offers high-speed random access and byte programming, and is suitable for replacement of erasable programmable read only memory (EPROM) and one-time programmable (OTP) devices. In addition, it can be used for control memory such as BIOS/Firmware as well as in mobile phone, hard disk drive and PDA eXecute In Place (XIP) applications. NAND Flash has become the storage media of choice for solid-state storage applications because of its high-speed programming capability, high-speed erasing, large block size and low cost. Toshiba’s NAND Flash memory products are optimized for applications such as solid-state drives, digital cameras, audio appliances, set-top boxes and industrial storage. The sequential nature (serial access) of NAND-based Flash memory provides notable advantages for these block-oriented data storage applications. NAND is also being designed into multi- functional cellular phone applications where fast data storage and larger memory capacities are required. Because the NAND cell structure is smaller than the NOR cell structure, it provides a more cost-effective memory solution when higher densities are needed. Product Overview: Removable NAND Flash Products Memory Cards Toshiba NAND Flash is the enabling technology behind high-density removable Flash storage solutions for digital cameras, cell phones, PDAs, MP3 players, laptops and more. The SD Memory Card was jointly developed by Toshiba Corporation, SanDisk Corporation and Matsushita Electric Industrial Co. Ltd. (best known for its Panasonic brand name products), and has been widely adopted worldwide. Today, Toshiba offers a wide selection of the latest high- capacity, standard and high-performance memory cards including SD, SD High-Capacity (SDHC), miniSD, miniSDHC, microSD and microSDHC. This broad selection of memory cards can be used in a variety of applications including digital still and video cameras, audio players, PDAs, mobile phones and other storage applications. For details on available configurations and densities, please visit our website at memory.toshiba.com. USB Flash Drives Toshiba addresses the popular USB 2.0 Flash drive market for convenient, transportable storage for data, digital photos, and music by offering USB 2.0 Flash drive subassemblies to OEMs as well as its branded TransMemory™ family of retail products. Toshiba also offers standard and enhanced for ReadyBoost USB Flash drives for portable data storage. The new Toshiba TransMemory™ U2K Series of USB Flash drives includes Windows ReadyBoost™ functionality that enables users to boost system responsiveness of PCs running the Windows Vista™ operating system by using USB memory as external system memory. The TransMemory U2K Series is available in capacities from 1GB to 16GB.
  4. 4. Toshiba America Electronic Components Flash Memory Fact Sheet Page 4 of 7 − more − Discrete SLC NAND Chips Toshiba offers its SLC NAND in discrete semiconductor form, available in fourteen configurations from 512Mbit to 64Gbit, for applications that require higher levels of read and write speeds and endurance. Embedded Flash Toshiba's embedded NAND Flash memory products are designed to meet the growing needs of wireless and handheld systems. Today, a significant number of mobile phones and MP3 players are relying on NAND for high capacity storage of audio, video, images and other data. Set-top boxes, digital cameras, camcorders, portable media players, laptops and GPS navigation tools can also benefit from NAND Flash solid-state storage. Toshiba has developed several enabling embedded memory solutions using cutting-edge 56nm process technology. Each solution includes high-density MLC NAND and a controller with a SD, HS-MMC or NAND interface. By combining high-density MLC NAND and the controller function in the same package, the need for host software drivers and memory management functions is minimized and the time to market is reduced, enabling designers to realize the cost/performance benefits of MLC NAND. LBA-NANDTM Toshiba LBA-NAND™ is a single-package Flash solution that combines high-density MLC NAND and a memory controller with logical block addressing, error correction code (ECC), wear leveling, block management, and a standard NAND interface. The resulting device is a simple write/read memory that enables virtually seamless integration of MLC NAND into new or existing embedded Flash applications supporting SLC NAND. The standard NAND interface is supported by many new and existing microprocessors and microcontrollers. As a result, LBA- NAND™ provides rapid design-in access to MLC NAND with storage capacities from 2GB to 16GB, as well as improved cost/performance metrics for consumer applications. LBA-NAND™ is designed for use in mobile consumer products, such as digital audio players and personal media players, and will support manufacturers in their efforts to develop products that can take full advantage of advances in NAND Flash memory capacity while minimizing development costs. eMMC™ NAND Ranging from 1GB to 16GB in capacity, Toshiba's eMMC embedded MLC solutions integrate a dedicated controller that is fully compliant with the MultiMediaCard Association (MMCA) Ver. 4.2 high speed memory standard for memory cards. These products support standard interfacing, a maximum data transfer rate of 52MB/sec.4, and simplify integration into system designs. The integrated MMCA Ver. 4.2 controller handles essential functions, including block management, wear leveling, ECC and driver software. The high-capacity 16GB device can store as many as 4,000 songs5 (at 4MB6 per song), and records up to 280 hours of data at a 128Kbps7 bit rate. The 16GB device stacks eight 2GB chips fabricated with leading-edge 56nm process technology. eSD NAND
  5. 5. Toshiba America Electronic Components Flash Memory Fact Sheet Page 5 of 7 For consumer electronics designers who prefer an SD interface, Toshiba eSD™ NAND is a single-package solution combining a memory controller, ECC, wear-leveling and block management with MLC NAND Flash memory. eSD™ NAND uses an SD bus, allowing easy design of products using an open SD interface. Available in capacities from 2GB to 16GB to provide storage space for music, photo, video files or other data, eSD™ NAND is ideal for use in the growing number of portable consumer applications such as digital audio/MP3 players, gaming, portable media players, GPS devices and PDAs. Toshiba eSD™ NAND allows easy design of products that support both embedded Flash storage and a removable Flash card. Some new controllers feature multiple I/Os making integration even easier. These embedded memory solutions provide an attractive alternative to both micro hard drives or conventional NAND Flash chips. Toshiba eSD NAND can include one or more high- capacity NAND Flash memory chips and an SD card controller in a single BGA package to minimize space requirements. As a result, system designers can take advantage of the high capacity of MLC NAND while minimizing the resources needed to develop their own drivers or memory management functions. Multi-Chip Packages Toshiba MCPs offer combinations from two to six chips of NAND Flash, NOR Flash, PSRAM and low power SDRAM in a single package to simplify layout and save valuable board space in cellular phones and other space-constrained mobile electronics devices. Toshiba is a leader in multi-chip packages that incorporate NAND Flash. Today's mobile phones, which incorporate multimedia functionality such as camera, music, video or games, demand the storage performance of NAND Flash to enhance the user’s experience. For this reason, mobile phone usage of embedded high density NAND Flash within MCPs continues to grow dramatically. Toshiba also offers several specialized MCP variations for mobile phones and related devices: mobileLBA-NAND mobileLBA-NAND is a new series of embedded NAND Flash memory for mobile phones that offers both a configurable SLC memory area and an MLC memory area. This flexibility makes it convenient to store applications and data on the same chip. These embedded memory solutions, available in MCPs and POPs, support a standard NAND Flash interface, which means they can easily be introduced into current generations of products. The LBA controller carries out essential functions, such as writing block management, wear-leveling and ECC, which minimizes any changes in the host controller specification. As a result, mobile LBA-NAND offers product developers a solution for reducing development time and costs for new and upgraded products. mobileLBA NAND is initially being offered in densities from 2Gb to 32Gb. GB MCP GB MCP is an MCP memory that, in addition to standard MCP memory devices such as NAND plus SDRAM or NOR plus PSRAM, integrates a gigabyte or larger NAND Flash memory chip with an SD card interface controller for high-density data storage applications, such as camera- and MP3-equipped cell phones. Package-On-Package (POP)
  6. 6. Toshiba America Electronic Components Flash Memory Fact Sheet Page 6 of 7 This enhanced MCP technology saves significant circuit board space in cellular handsets and other mobile devices by stacking a high-density multi-chip memory component (MCP) on top of the processor so the two components require only one footprint on the board. Toshiba is offering Low Power SDRAM and high-density NAND Flash POP configurations in various package sizes. Solid State Drives Toshiba has entered the SSD market with a family of MLC NAND-based SSDs for mobile computing that integrate an original MLC controller supporting fast read-write speeds, parallel data transfer and wear-leveling, and achieve performance levels comparable to those of single- level cell NAND flash-based SSDs. Toshiba’s SSD product offering includes SATA drives with capacities of 64GB, 128GB, 256GB and 512GB. Selected configurations are available in three form factors: an embedded module, and 1.8-inch and 2.5-inch drive enclosures. In addition, Toshiba offers 8GB, 16GB and 32GB Flash Modules targeted for netbook applications. Compared to hard disk drives, SSDs realize a faster boot time, higher reliability, improved performance and no mechanical sound, but market penetration to date has been held back by low densities and high prices. By applying MLC technology, Toshiba has achieved a 128GB capacity in a 1.8-inch form factor, and 256GB and 512GB in a 2.5-inch form factor. The company expects the launch of its MLC NAND-based line-up to speed the acceptance of solid state storage in laptops and digital consumer products and to widen the horizons of the NAND flash market. Mass Production Capabilities Toshiba’s Flash memory production facilities at its Yokkaichi Operations in Japan include both 200mm and 300mm production lines. The company’s first 12-inch wafer fabrication facility, Y3, at Yokkaichi went online in mid-2005, and the second, Y4, began mass production in December 2007. Executives • Scott Nelson, vice president, Memory Business Unit • Asayuki Nannichi, director, Memory Business Unit • Brian Kumagai, senior business development manager, Flash Memory products (NAND) • Scott Beekman, senior business development manager, Communications Memory products (MCP, NOR, LP SDRAM, PSRAM) Location Toshiba America Electronic Components, Inc., 19900 MacArthur Blvd., Suite 400, Irvine, CA 92612, Telephone (949) 623-2900. Internet Address http://www.toshiba.com/taec/ Public Relations Contact MultiPath Communications International Jan Johnson (714) 633-4008 jan@multipathcom.com Marketing Communications Contact Rebecca Bueno, (949) 623-3099 rebecca.bueno@taec.toshiba.com
  7. 7. Toshiba America Electronic Components Flash Memory Fact Sheet Page 7 of 7 Reader Inquiry Contact Tech.Question@taec.toshiba.com -###- 1 iSuppli NAND Flash Supplier Rankings, 2007 2 When used herein in relation to memory density, gigabit, Gbit and/or Gb means 1,024x1024x1024 = 1,073,741,824 bits. Usable capacity may be less. 3 When used herein in relation to memory density, gigabyte and/or GB means 1,024x1024x1024 = 1,073,741,824 bytes. Usable capacity may be less. 4 When used herein in relation to memory density, megabit, Mbit and/or Mb means 1,024x1,024 = 1,048,576 bits. Usable capacity may be less. For details, please refer to specifications. 4 For purposes of measuring data transfer rate in this context, megabyte per second, or MB/s = 1,000,000 bytes per second. 5 The number of songs was estimated by dividing the memory capacity by the stated average song length. 6 When used herein in relation to memory density, megabyte and/or MB means 1,024x1,024 = 1,048,576 bytes. Usable capacity may be less. For details, please refer to specifications. 7 For purposes of measuring data transfer rate in this context, 1 kilobit (Kb) = 1,000 bits. LBA-NAND is a trademark of TOSHIBA Corporation. eMMC is a trademark of the MultiMediaCard Association. ReadyBoost is a trademark of the Microsoft Corporation. All others are trademarks of their respective manufacturer and may be registered in certain jurisdictions. FLSH 08 905 Updated 12-18-08

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