Toshiba America Electronic Components, Inc. Flash MemoryDocument Transcript
Toshiba America Electronic Components, Inc.
Through proven commitment, lasting relationships and advanced, reliable electronic
components, Toshiba enables its customers to create market-leading designs. Toshiba is the
heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip
companies worldwide. Working closely with design engineers to navigate and define the ever-
changing need for innovation, Toshiba Corp. (Toshiba) and its subsidiary in the Americas,
Toshiba America Electronic Components, Inc. (TAEC), deliver value-added solutions with
conviction, passion and artistry. Toshiba is committed to enabling product breakthroughs with
advanced, reliable electronic components and responsive technical support. With seamless
design and manufacturing of high-quality Flash memory-based storage solutions, discrete
devices, displays, advanced materials, medical tubes, custom SoC/ASICs, digital multimedia and
imaging products, microcontrollers and wireless components, Toshiba makes possible today’s
leading cell phones, digital music players, cameras, medical devices, TVs, automotive
electronics and more.
Memory Business Unit Overview
Toshiba has consistently led the way in developing non-volatile memory solutions, beginning as
the principal innovator of NAND- and NOR-type Flash memory in the 1980s. Toshiba continues
to be a NAND technology leader and offers a complete line of solid state drives, and removable
and embedded NAND Flash memory solutions, including both Single-Level Cell (SLC) and
Multi-Level Cell products. In addition, Toshiba offers Multi-Chip Packages (MCP) which
integrate various memory technologies including NAND Flash, NOR Flash, Pseudo SRAM
(PSRAM) and low power SDRAM in a single package to simplify layout and save valuable
board space in cellular phones and other space-constrained mobile electronics devices.
Innovation and Leadership
Toshiba has made major investments in design and process technologies that enable the company
to offer advanced memory products. Through its ongoing commitment to invest in future
technologies, Toshiba will continue to provide advanced solutions to meet evolving customer
needs. Notable milestones include:
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Toshiba America Electronic Components Flash Memory Fact Sheet Page 2 of 7
• Principal innovator of NAND and NOR Flash
• World's second-largest NAND Flash memory supplier1
• 16Gb2 56nm NAND Flash achieves single-chip 2GB3 storage
• MLC NAND in production at 56nm
• Fab3, a joint venture of Toshiba and SanDisk, at Toshiba Yokkaichi works, is Japan's
largest 300mm wafer fab in operation
• Fab4, the industry’s largest NAND fab, is also a joint venture of Toshiba and SanDisk,
and began to ramp mass production in December 2007.
• Fab4 will employ cutting-edge 56nm process technology at start up and will gradually
transition to 43nm technology starting from March 2008, transitioning to approximately
90 percent 43nm production by 1Q09.
• Consistent semiconductor capital investments of approximately $2B annually
• First to market with monolithic 16Gb 43nm SLC NAND.
• First to introduce a 512GB 2.5-inch solid state drive.
SLC NAND chips can read and write data at high speed, and offer high level reliability. With its
43nm process generation, Toshiba is now offering a selection of SLC NAND chips ranging in
density from 512Mbits to 64Gbits, to meet diversifying applications. The enhanced SLC lineup
offers support for mobile phones, office automation equipment and servers, all of which require
high levels of read and write speeds and reliability.
As the price per bit of NAND Flash has decreased with advances in MLC technology and small
process geometries that enable greater storage density, NAND Flash has enabled a series of new
markets. From its initial widespread use in memory cards for cameras, NAND Flash has now
been widely adopted for use in audio players, USB Flash drives, portable media players, and
mobile handsets, with new opportunities developing in camcorders, automotive applications and
computing. In the computing market, emerging applications include NAND cache, hybrid drives
and solid-state drives (SSD).
Toshiba MLC NAND Flash offers the right mix of cost and performance to satisfy a wide range
of today’s demanding storage requirements. As feature-rich electronic products drive the need
for higher density data storage, system designers are increasingly turning to Toshiba MLC
NAND storage solutions.
Toshiba expects to continue an industry leadership role in the development of super-MLC
technologies, such as 3-bit or 4-bit per cell solutions. The company has also announced R&D
milestones for a three-dimensional memory cell array structure that enhances cell density and
data capacity without relying on advances in process technology, and with minimal increase
in the chip die size.
Flash Memory Overview
As the recognized pioneer in Flash technology, Toshiba was a principal innovator of both NOR-
type and NAND-type Flash technology. Today, Toshiba continues development of both NAND
and NOR Flash, and understands the unique advantages associated with each architecture. By
offering both types of Flash memory, Toshiba is able to meet the needs of a vast array of
applications. NOR Flash applications have typically been used for fast random access for code
Toshiba America Electronic Components Flash Memory Fact Sheet Page 3 of 7
execution in applications such as set-top boxes and mobile handsets, while high-density NAND
Flash is preferred for digital consumer, solid-state storage applications and is quickly finding its
way into traditional NOR applications such as mobile handsets for data storage and/or code
storage as well.
NOR technology offers high-speed random access and byte programming, and is suitable for
replacement of erasable programmable read only memory (EPROM) and one-time
programmable (OTP) devices. In addition, it can be used for control memory such as
BIOS/Firmware as well as in mobile phone, hard disk drive and PDA eXecute In Place (XIP)
NAND Flash has become the storage media of choice for solid-state storage applications because
of its high-speed programming capability, high-speed erasing, large block size and low cost.
Toshiba’s NAND Flash memory products are optimized for applications such as solid-state
drives, digital cameras, audio appliances, set-top boxes and industrial storage. The sequential
nature (serial access) of NAND-based Flash memory provides notable advantages
for these block-oriented data storage applications. NAND is also being designed into multi-
functional cellular phone applications where fast data storage and larger memory capacities are
required. Because the NAND cell structure is smaller than the NOR cell structure, it provides a
more cost-effective memory solution when higher densities are needed.
Removable NAND Flash Products
Toshiba NAND Flash is the enabling technology behind high-density removable Flash storage
solutions for digital cameras, cell phones, PDAs, MP3 players, laptops and more. The SD
Memory Card was jointly developed by Toshiba Corporation, SanDisk Corporation and
Matsushita Electric Industrial Co. Ltd. (best known for its Panasonic brand name products), and
has been widely adopted worldwide. Today, Toshiba offers a wide selection of the latest high-
capacity, standard and high-performance memory cards including SD, SD High-Capacity
(SDHC), miniSD, miniSDHC, microSD and microSDHC. This broad selection of memory cards
can be used in a variety of applications including digital still and video cameras, audio players,
PDAs, mobile phones and other storage applications. For details on available configurations and
densities, please visit our website at memory.toshiba.com.
USB Flash Drives
Toshiba addresses the popular USB 2.0 Flash drive market for convenient, transportable storage
for data, digital photos, and music by offering USB 2.0 Flash drive subassemblies to OEMs as
well as its branded TransMemory™ family of retail products. Toshiba also offers standard and
enhanced for ReadyBoost USB Flash drives for portable data storage. The new Toshiba
TransMemory™ U2K Series of USB Flash drives includes Windows ReadyBoost™
functionality that enables users to boost system responsiveness of PCs running the Windows
Vista™ operating system by using USB memory as external system memory. The
TransMemory U2K Series is available in capacities from 1GB to 16GB.
Toshiba America Electronic Components Flash Memory Fact Sheet Page 4 of 7
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Discrete SLC NAND Chips
Toshiba offers its SLC NAND in discrete semiconductor form, available in fourteen
configurations from 512Mbit to 64Gbit, for applications that require higher levels of read and
write speeds and endurance.
Toshiba's embedded NAND Flash memory products are designed to meet the growing needs of
wireless and handheld systems. Today, a significant number of mobile phones and MP3 players
are relying on NAND for high capacity storage of audio, video, images and other data. Set-top
boxes, digital cameras, camcorders, portable media players, laptops and GPS navigation tools
can also benefit from NAND Flash solid-state storage.
Toshiba has developed several enabling embedded memory solutions using cutting-edge 56nm
process technology. Each solution includes high-density MLC NAND and a controller with a
SD, HS-MMC or NAND interface. By combining high-density MLC NAND and the controller
function in the same package, the need for host software drivers and memory management
functions is minimized and the time to market is reduced, enabling designers to realize the
cost/performance benefits of MLC NAND.
Toshiba LBA-NAND™ is a single-package Flash solution that combines high-density MLC
NAND and a memory controller with logical block addressing, error correction code (ECC),
wear leveling, block management, and a standard NAND interface. The resulting device is a
simple write/read memory that enables virtually seamless integration of MLC NAND into new
or existing embedded Flash applications supporting SLC NAND. The standard NAND interface
is supported by many new and existing microprocessors and microcontrollers. As a result, LBA-
NAND™ provides rapid design-in access to MLC NAND with storage capacities from 2GB to
16GB, as well as improved cost/performance metrics for consumer applications. LBA-NAND™
is designed for use in mobile consumer products, such as digital audio players and personal
media players, and will support manufacturers in their efforts to develop products that can take
full advantage of advances in NAND Flash memory capacity while minimizing development
Ranging from 1GB to 16GB in capacity, Toshiba's eMMC embedded MLC solutions integrate a
dedicated controller that is fully compliant with the MultiMediaCard Association (MMCA) Ver.
4.2 high speed memory standard for memory cards. These products support standard interfacing,
a maximum data transfer rate of 52MB/sec.4, and simplify integration into system designs. The
integrated MMCA Ver. 4.2 controller handles essential functions, including block management,
wear leveling, ECC and driver software. The high-capacity 16GB device can store as many as
4,000 songs5 (at 4MB6 per song), and records up to 280 hours of data at a 128Kbps7 bit rate. The
16GB device stacks eight 2GB chips fabricated with leading-edge 56nm process technology.
Toshiba America Electronic Components Flash Memory Fact Sheet Page 5 of 7
For consumer electronics designers who prefer an SD interface, Toshiba eSD™ NAND is a
single-package solution combining a memory controller, ECC, wear-leveling and block
management with MLC NAND Flash memory. eSD™ NAND uses an SD bus, allowing easy
design of products using an open SD interface. Available in capacities from 2GB to 16GB to
provide storage space for music, photo, video files or other data, eSD™ NAND is ideal for use in
the growing number of portable consumer applications such as digital audio/MP3 players,
gaming, portable media players, GPS devices and PDAs.
Toshiba eSD™ NAND allows easy design of products that support both embedded Flash storage
and a removable Flash card. Some new controllers feature multiple I/Os making integration even
easier. These embedded memory solutions provide an attractive alternative to both micro hard
drives or conventional NAND Flash chips. Toshiba eSD NAND can include one or more high-
capacity NAND Flash memory chips and an SD card controller in a single BGA package to
minimize space requirements. As a result, system designers can take advantage of the high
capacity of MLC NAND while minimizing the resources needed to develop their own drivers or
memory management functions.
Toshiba MCPs offer combinations from two to six chips of NAND Flash, NOR Flash, PSRAM
and low power SDRAM in a single package to simplify layout and save valuable board space in
cellular phones and other space-constrained mobile electronics devices. Toshiba is a leader in
multi-chip packages that incorporate NAND Flash. Today's mobile phones, which incorporate
multimedia functionality such as camera, music, video or games, demand the storage
performance of NAND Flash to enhance the user’s experience. For this reason, mobile phone
usage of embedded high density NAND Flash within MCPs continues to grow dramatically.
Toshiba also offers several specialized MCP variations for mobile phones and related devices:
mobileLBA-NAND is a new series of embedded NAND Flash memory for mobile phones that
offers both a configurable SLC memory area and an MLC memory area. This flexibility makes
it convenient to store applications and data on the same chip. These embedded memory
solutions, available in MCPs and POPs, support a standard NAND Flash interface, which means
they can easily be introduced into current generations of products. The LBA controller carries
out essential functions, such as writing block management, wear-leveling and ECC, which
minimizes any changes in the host controller specification. As a result, mobile LBA-NAND
offers product developers a solution for reducing development time and costs for new and
upgraded products. mobileLBA NAND is initially being offered in densities from 2Gb to 32Gb.
GB MCP is an MCP memory that, in addition to standard MCP memory devices such as NAND
plus SDRAM or NOR plus PSRAM, integrates a gigabyte or larger NAND Flash memory chip
with an SD card interface controller for high-density data storage applications, such as camera-
and MP3-equipped cell phones.
Toshiba America Electronic Components Flash Memory Fact Sheet Page 6 of 7
This enhanced MCP technology saves significant circuit board space in cellular handsets and
other mobile devices by stacking a high-density multi-chip memory component (MCP) on top of
the processor so the two components require only one footprint on the board. Toshiba is offering
Low Power SDRAM and high-density NAND Flash POP configurations in various package
Solid State Drives
Toshiba has entered the SSD market with a family of MLC NAND-based SSDs for mobile
computing that integrate an original MLC controller supporting fast read-write speeds, parallel
data transfer and wear-leveling, and achieve performance levels comparable to those of single-
level cell NAND flash-based SSDs. Toshiba’s SSD product offering includes SATA drives with
capacities of 64GB, 128GB, 256GB and 512GB. Selected configurations are available in three
form factors: an embedded module, and 1.8-inch and 2.5-inch drive enclosures. In addition,
Toshiba offers 8GB, 16GB and 32GB Flash Modules targeted for netbook applications.
Compared to hard disk drives, SSDs realize a faster boot time, higher reliability, improved
performance and no mechanical sound, but market penetration to date has been held back by low
densities and high prices. By applying MLC technology, Toshiba has achieved a 128GB
capacity in a 1.8-inch form factor, and 256GB and 512GB in a 2.5-inch form factor. The
company expects the launch of its MLC NAND-based line-up to speed the acceptance of solid
state storage in laptops and digital consumer products and to widen the horizons of the NAND
Mass Production Capabilities
Toshiba’s Flash memory production facilities at its Yokkaichi Operations in Japan include both
200mm and 300mm production lines. The company’s first 12-inch wafer fabrication facility, Y3,
at Yokkaichi went online in mid-2005, and the second, Y4, began mass production in December
• Scott Nelson, vice president, Memory Business Unit
• Asayuki Nannichi, director, Memory Business Unit
• Brian Kumagai, senior business development manager, Flash Memory products (NAND)
• Scott Beekman, senior business development manager, Communications Memory products
(MCP, NOR, LP SDRAM, PSRAM)
Toshiba America Electronic Components, Inc., 19900 MacArthur Blvd., Suite 400, Irvine, CA
92612, Telephone (949) 623-2900.
Public Relations Contact
MultiPath Communications International
Jan Johnson (714) 633-4008 firstname.lastname@example.org
Marketing Communications Contact
Rebecca Bueno, (949) 623-3099 email@example.com
Toshiba America Electronic Components Flash Memory Fact Sheet Page 7 of 7
Reader Inquiry Contact
iSuppli NAND Flash Supplier Rankings, 2007
When used herein in relation to memory density, gigabit, Gbit and/or Gb means 1,024x1024x1024 = 1,073,741,824
bits. Usable capacity may be less.
When used herein in relation to memory density, gigabyte and/or GB means 1,024x1024x1024 = 1,073,741,824
bytes. Usable capacity may be less.
When used herein in relation to memory density, megabit, Mbit and/or Mb means 1,024x1,024 = 1,048,576 bits.
Usable capacity may be less. For details, please refer to specifications.
For purposes of measuring data transfer rate in this context, megabyte per second, or MB/s = 1,000,000 bytes per
The number of songs was estimated by dividing the memory capacity by the stated average song length.
When used herein in relation to memory density, megabyte and/or MB means 1,024x1,024 = 1,048,576 bytes.
Usable capacity may be less. For details, please refer to specifications.
For purposes of measuring data transfer rate in this context, 1 kilobit (Kb) = 1,000 bits.
LBA-NAND is a trademark of TOSHIBA Corporation. eMMC is a trademark of the MultiMediaCard Association.
ReadyBoost is a trademark of the Microsoft Corporation. All others are trademarks of their respective manufacturer
and may be registered in certain jurisdictions.
FLSH 08 905