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  • Yole has just released a new market & technology report on Emerging Non-Volatile Memory, more information, sample... at http://www.i-micronews.com/reports/Emerging-Non-Volatile-Memory/6/347/
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  • 1. Memory Applications: Packaging & Integration Trends – 2009 Report – How 3-D integration will challenge and reshape the memory industry Infineon Nokia © 2009 Copyrights © Yole Développement SARL. All rights reserved.
  • 2. Macro Industry Trends • Wireless is everywhere, growing and enabling new market segments (smart- phones, net books, pocket computing devices) – CONNECTIVIY and INTEGRATION are the main drivers • Demands for data is increasing as well: – Faster pipes, more pipes (WAN, LAN, PAN), performance, concurrency – HD multimedia is coming • Complexity and concurrency require improved power consumption and are stressing current architectures: – Need for more efficient interconnect methods for pin count relief and low power consumption • As a results, everything is pointing to more and more “local” memory/storage at the device level – More and more quantity and get memory closer to logic for higher performance – Cloud computing could remove the need for increasing “memory storage” content at the device level. However, this will not happen before many years from now (> 2015) © 2009 • 2 Copyrights © Yole Développement SARL. All rights reserved.
  • 3. Memory BOM growth forecast in Mobile Handsets Worldwide Mobile Phone Semiconductor Revenue Share by Type of Content 100% Image processor 90% 80% 22% Apps processors and 70% coprocessors 28% 60% Onboard Memory 50% (Flash/PSRAM/MDRAM) 40% Radio/connectivity 30% 20% Baseband (Digital + Analog) 10% 0% 2006 2007 2008 2009 2010 2011 Source: IDC 2007 • Memory content grows even while other Semiconductor content falls – Driven by growing Density requirements • Memory revenue CAGR 2007-2011 ~ 5.1% © 2009 • 3 Copyrights © Yole Développement SARL. All rights reserved.
  • 4. Memory Applications / Markets TODAY: • RAM memories are historically driven by computing applications (desktop computers, server engines…) • NOR Flash is mostly used to store and have fast reading access to OS data (applications of operating systems)  used in most of today‟s consumer devices (cell-phone, DSCs, portable media players, printers…) • NAND Flash has emerged recently for storage based applications in most consumer applications TOMOROW: • New generation memories (PRAM, FeRAM, MRAM..) are being developed and introduced on the market for potential replacement of NOR Flash & SRAM into embedded memory applications • “Solid State” memory is the next killer application for adoption of NAND Flash in volume: – SSDs to replace HDD (hard disk magnetic drives) mainly in: • Personal computing markets (notebooks, net book, MIDs …) • Enterprise / Data server markets – General memory content also growing in Multimedia / Gaming / Micro-Cards applications – New package technologies are needed to adapt to tighter footprint requirements (e.g. 3D TSV) • RAM (SRAM / DRAM) memory integration is driven by computing / wireless Logic application: – DDR3 / DDR4 DRAM: TSV soon require to answer to density versus bandwidth limitation – Wireless Logic  Trend is to combine into one single package all memory content in order to control: • Multi-mode cellular communication devices (related to GSM / 3G / LTE: Analog & digital baseband chips) • Multimedia and computing devices (related to Application processor and graphic accelerator chips) • Wireless connectivity devices (related to Bluetooth, WLAN, GPS, NFC chips) – Computing Logic  Trend to stack high capacities of DRAM cache memories for next generation computing perf. • CPU/GPU graphic engines applications • HPC, Server, FPGAs… © 2009 • 4 Copyrights © Yole Développement SARL. All rights reserved.
  • 5. Overall memory wafer shipment forecasts (12’’ wspy eq.) © 2009 • 5 Copyrights © Yole Développement SARL. All rights reserved.
  • 6. Impact on Memory Packaging & Integration • Memory ASPs will continue to decrease and will reach their “cost versus density” limits with latest advancements of lithography technology (45nm, 32nm to 22nm node?) • On the other hand, memory packaging and integration is becoming more and more challenging for different reasons: – NAND Flash memory quantity is increasing fast in data storage applications especially (SSDs, Micro-SD cards, MCP/SiP/PoP packages): stringent density and form factor requirements to stack more silicon in ever less space – NOR Flash will be progressively replaced by NAND+SRAM combination and New generation memories (e.g. PC-RAM) – RAM based memories: • Memory integration of RAM memories (on-chip, in-package…) is growing fast: DRAM product usage is mostly doubling Year to Year, especially in mobile / nomadic devices • Interfacing Logic to external DRAM is more and more difficult due to increasing requirements on bandwidth, performance, power consumption and pin-counts accessibility: – Possibility for Fan-out WLP integration in some portion of the low-end DRAM market – Integration of DRAM in stacked memories SiP packages (FC-BGAs, POP…): new package & interconnect technologies are needed to adapt to tighter footprint requirements (e.g. 3-D TSV interconnects) – Embedded RAM: o Embedded DRAM is already available today, but still “emerging”  Driven by performance motivations („CPU + memory‟ or „Baseband + memory‟ that are stacked in a face to face manner)  eDRAM with TSVs are coming soon (> 2010) and will enable higher performance and bandwidth first and will provide later on direct access / interfacing to the external “cache memory” SiP package o Managing internal SRAM memory in Wireless Logic SOC applications is still possible but die sizes are expanding with time: cost impact is becoming more and more critical  Efficient re-partioning of memory content will be needed at some point: • Embedded memories holds promising future by stacking both eDRAM and eFlash on top of 3D- SOCs for Cost driven motivations • Not yet area/cost effective  but coming soon! © 2009 • 6 Copyrights © Yole Développement SARL. All rights reserved.
  • 7. 3-D integration of memories with TSV PCB Example of 3-D integrated construction (Image courtesy of DuPont Electronics) © 2009 • 7 Copyrights © Yole Développement SARL. All rights reserved.
  • 8. 3D TSV memory wafer shipments per Industry: 2013 forecast © 2009 • 8 Copyrights © Yole Développement SARL. All rights reserved.
  • 9. Report - Table of Content (1/2) • Introduction to memory technologies …. Page 1 • Memory Packaging & Integration Trends …. Page 33 – DRAM / SRAM / NOR Flash / NAND Flash – Architectures and memory die quantity analysis in current • Overall memory shipment market (in Units) product‟s generation: • Overall memory market revenues (in $B) • Focus on Cell-phones, SSDs, DSCs, servers, Portable – Trends for next generation Non-Volatile memory media players and game stations technologies: – Single Die versus Stacked packaging: • M-RAM / PC-RAM: status of industrialization and • Key market metrics and packaging trends for memory near-term opportunities integration using TSOP / FBGA / PoP / PiP / WLP Fan-in / Fan-out WLP packages • Memory Applications & Markets …...……. Page 18 • Impact of 3-D integration technologies on the – Current & future applications driving DRAM / SRAM / NAND / NOR Flash memory demand memory market ………..…………………………..……. Page 55 • Per industry: – Applications and market drivers for 3D integration with memories – Market forecasts in Munits shipment and in 300mm wafers equivalent – “Embedded 3D-SOC memories” Versus “3-D Stacked – Breakdown for Telecom / Computing / memories in SiP”: Consumer / Servers / Automotive / Industrial • Definitions, players and roadmaps & Medical markets • 2008-2015 market forecasts in Munits shipment and in • Per product / application: 300mm wafers equivalent – 2008-2015 market forecasts in Munits – „‟3D Chip Stacking‟‟ Vs. „‟Circuit Transfer 3D‟‟ Vs. shipment and in 300mm wafers equivalent „‟Monolithic 3D‟‟ integration – Breakdown for Desktop PCs / Notebooks / • Definitions, players and roadmaps Net books / MID / Regular & Blade Servers / • 2008-2015 market forecasts in Munits shipment and in Data storage servers / Portable media players / Portable game stations / Memory 300mm wafers equivalent Cards / USB Stick / Cell-phones / Game stations / Set-Top Box / HD camcorders / DSC / SLR / Automotive / Base stations / Portable navigation Sys – GPS / Digital TV / Workstations / Memory Upgrades / HDD / Printer / Analog TV / DVD Player / HPC / ATE systems © 2009 • 9 Copyrights © Yole Développement SARL. All rights reserved.
  • 10. Report - Table of Content (2/2) – Overall Roadmap for 3-D integration with Memories (2008 – 2015) – Impact of 3-D integration with TSV on DRAM / SRAM / NAND / NOR Flash memory markets • 2008-2015 market forecasts in Munits shipment and in 300mm wafers equivalent • Breakdown per mount technology: forecast for Single die / Wire Bond stacked / 3-D TSV memory • Breakdown per application: – Opportunities of 3-D integrated memory in • … (continued from previous slide) Impact of 3-D DDR3 / DDR4 / Wireless Application integration technologies on the memory processors / Wireless Baseband - DSP / SSDs / Graphic memory / Micro-Cards / market: Embedded & Cache CPU-GPU / FPGAs – MLC versus SLC Flash memory architectures: impact on adoption of 3-D TSV integrated memories • Definitions, players and roadmaps • Player‟s strategy for 3-D integration with • 2008-2015 market forecasts in Munits shipment memories ……………….…………………………………... Page 85 and in 300mm wafers equivalent – Supply chain analysis: Memory fabs / CMOS – Silicon interposers for 3D TSV memories: foundries / IDMs / OSATs/ Fab-less / Integrator • Definitions, players and roadmaps player activities • 2008-2015 market forecasts in Munits shipment – Infrastructure & pre-competitive alliances in 3-D IC and in 300mm wafers equivalent system integration – TSV manufacturing cost challenge: • What is the process and cost of TSV in memories today? • Perspectives & Conclusions ……………….……. Page 98 • What is the targeted cost for a broad adoption of 3-D TSV into low cost memory markets? • Annexes ….…………………………………………………. Page 104 © 2009 • 10 Copyrights © Yole Développement SARL. All rights reserved.
  • 11. Extracted slides from the report (sample) © 2009 • 11 Copyrights © Yole Développement SARL. All rights reserved.
  • 12. Key features & Benefits • Companies cited in the report : – AMD, Amkor, Chartered Semiconductor, Dai Nippon Printing, Dongbu HiTek, Ibiden, IBM, IMFlash, Intel, Elpida, Excico, Freescale, Fujitsu, Hynix, Micron, Nanya, NEC, Numonyx, Qualcomm, Renesas, TSMC, Texas Instruments, Samsung, SanDisk, Seagate, Shinko, SOITEC / Tracit, Sony, StatsChipPac, STMicroelectronics, Spansion, SPIL, Swissbit, Tezzaron, Toshiba, UMC, Xilinx, Ziptronix and more … • Who should buy this report ? – Strategy & Marketing executives from the equipment, materials or chip manufacturing semiconductor industries who need to position rapidly about the impact of 3-D integration on the complex, high volume and fast moving memory market. • Key features: – Up-to-date Key metrics of the memory market: • Per application (more than 30 products screened) • Per type of memory (DRAM / SRAM / NOR / NAND Flash) • In Munits shipment and in 300mm wafer equivalent – Impact of 3-D integration on the memory market and applications – Key players strategy for 3D integration with memories – Cost analysis & challenges for TSV manufacturing: • How to make TSV interconnects happen in high volume / low cost memory markets? © 2009 • 12 Copyrights © Yole Développement SARL. All rights reserved.
  • 13. Contact us! • For more information on this report, please contact David Jourdan at: – jourdan@yole.fr – + 33 472 83 01 80 • For more information on our activity & services: Market Research & Publications & Strategy Consulting Services Newsletters www.yole.fr www.i-micronews.com/3DIC.asp © 2009 • 13 Copyrights © Yole Développement SARL. All rights reserved.