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    Microsoft PowerPoint - fms09 - tut 2A - Flash Memory Summit ... Microsoft PowerPoint - fms09 - tut 2A - Flash Memory Summit ... Presentation Transcript

    • Toggle-Mode NAND to Fill Growing Need for Higher Performance Ha Ryong (Harry) Yoon Sr. Sr Manager in Technical Marketing Samsung Semiconductor Inc. Santa Clara, CA USA August 2009 1
    • Process Technology Evolution Density Keeps Increasing Performance & Reliability Concerns !!! 90nm 70nm 60nm 50nm 40nm 30nm 20nm Santa Clara, CA USA August 2009 2
    • Growing Need for Higher Performance - Interface Speed Trend SATA 3 SATA 2 SATA 1 UFS MMC 4.4 MMC 4.3 USB 3.0 USB 2.0 SD 3.0 UHS-2 30 SD 3.0 UHS-1 BW I/F Speed(Per Pin) SD 2.0 0 1 2 3 4 5 6 Santa Clara, CA USA Gbps August 2009 3
    • Growing Need for Higher Performance - NAND Performance Requirement PCIe3.0 (x16,32ch) 500Mbps Mbps 250 PCIe2.0 (x4,10ch) PCIe2 0 (x4 10ch) 200 UFS (x1,2ch) USB3.0 (x1,4ch) 150 SD3.0(UHS2, x4,2ch)) PCIe2.0 PCIe2 0 (x1,4ch or x4,16ch) SAS6G (x1,16ch) 100 SATA3-6G (x1,10ch) SD3.0(UHS1) SD3 0(UHS1) MMC4.4 MMC4 4 50 40Mbps, Legacy NAND 2008 2009 2010 2011 2012 Santa Clara, CA USA * Only I/F BW translated. If considering latency, min requirement would be increased August 2009 4
    • Market Expansion NAND Consumption in EDP 100% • Enterprise-class SSD (SATA3, Enterprise class 90% SAS, PCIe) and high-speed card(USB3.0, UHS2, UFS) are 80% 78% 64% fueling the need of higher 58% 70% 53% 49% performance NAND 60% M/S 50% • Enterprise SSD will take ~65% of 65% M Flash Card (USB + Cards) 40% SSD market at 2012 Solid-State Drives 44% 30% 41% • USB will take ~14% of NAND 14% 20% 36% market at 2012 10% 30% 17% 0% • SD & uSD will take ~80% of flash 80% 2008 2009 2010 2011 2012 2013 Year Source: Gartner (February, 2009) card market at 2012 Santa Clara, CA USA August 2009 5
    • Toggle-Mode NAND? High speed “Toggle-Mode” operation • No clock – Asynchronous Double Data Rate • High performance by using the asynchronous interface for backward compatibility • Bidirectional DQS for read and write operations CE# CE# Toggle-Mode NAND CLE CLE ALE ALE Legacy Toggle DDR I/F RE# RE# Logic WE# WE# SLC/MLC NAND NAND WP# WP# NAND R/B# R/B# D Q DQS DQ[0:7] DQ[0:7] Santa Clara, CA USA August 2009 6
    • Why Toggle-Mode NAND? High performance • Supports 133Mbps and higher Less power consumption • No free-running clock Flexibility of operating frequency • No additional mode change required Easy migration from legacy NAND • Same signal functionality as legacy NAND Santa Clara, CA USA August 2009 7
    • Differentiation from Others WRITE READ No free-running clock WE# RE# • Less power consumption DQS DQS • F Free from IP i f issues Din Dout Flexibility of operating frequency • No additional mode-set change required Simple adoption • Same signal functionality as legacy NAND Santa Clara, CA USA August 2009 8
    • Development Status & Roadmap 1st Gen available 2H ’09 at 133Mbps 2nd Gen(200Mbps) targeted for early’11, but ( p ) g y entry time depends on market needs and requirements ’09 ’11 or earlier? ~’13(Investigating) Gen 1 Gen 2 Gen 3 133Mbps 200Mbps 400Mbps Santa Clara, CA USA August 2009 9
    • Standardization Status in JEDEC Item Status Comments Packaging & Pin-out On Going Ball Configuration Done Addressing & Bad Block g Done Definition Signal Definition On Going Under Documentation AC P Parameter t Done D Initialization & Identification Done Timing/Command Set On Going Basic Command Set Done Interface & I/O Characteristics On Going AC/DC & Operating Condition Done Parameter Page D fi iti P t P Definition O Going B t [100 0] D On G i Byte[100:0] Done Santa Clara, CA USA August 2009 10
    • Thank You ! For more information, harry.yoon@ssi.samsung.com Santa Clara, CA USA August 2009 11