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11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
11.property analysis of quantum dot cuboid nanocrystals with different nanostructures
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11.property analysis of quantum dot cuboid nanocrystals with different nanostructures

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  • 1. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012 Property Analysis of Quantum dot Cuboid Nanocrystals with Different Nanostructures Syed Bahauddin Alam, K M Mohibul Kabir, Md. Didarul Alam, Palash Karmokar†,Asfa Khan†, Md. Nagib Mahafuzz†, Farha Sharmin††, Hasan Imtiaz Chowdhury, Md. Abdul Matin Department of EEE, *Bangladesh University of Engineering and Technology (BUET), Dhaka †University of Asia Pacific (UAP), Dhaka †† Development Research Network (D.Net) baha_ece@yahoo.comAbstractQuantum dot nanocrystals represent a truly enabling nanotechnology and offer revolutionary fluorescenceperformance of long-term photostability for live-cell imaging and dynamics studies, single-excitationmulticolor analysis, fixability for follow-up immunofluorescence and Narrow, symmetrical emissionspectra for low interchannel crosstalk. Quantum dots are a revolutionizing material where traditionalsemiconductors fall short. In this paper, property analysis of quantum dot cuboid nanocrystals with differentnanostructures are shown by simulation results for particular device structure and boundary conditions ofLight and dark Transitions for the X, Y and Z- Polarized for different structures and so forth. Finally fromthe simulation, it is evident that, the characteristics are almost equivalent for different nanostructures for aparticular boundary condition.Keywords: Quantum dot, nanocrystals, dimensions, Effective Mass, Energy Gap, Discretization.1. IntroductionAny solid material in the form of a particle with a diameter comparable to the wavelength of an electron.Quantum Dots is man-made artificial atoms that confine electrons to a small space. As such they haveatomic-like behavior and enable the study of quantum mechanical effects on a length scale that is around100 times larger than the pure atomic scale. Quantum dots offer application opportunities in optical sensors,lasers, and advanced electronic devices for memory and logic. This seminar starts with an overview ofwavelike and particle like properties and motivates the existence of quantum mechanics. It closes thequantum mechanics point of view with these new fascinating artificial atoms. Quantum dots were predictedto exhibit interesting cooperative behavior in many-dot systems with overlapping wave functions, due tothe resulting miniband structure, and also as elements in cellular neural networks .However, no scheme forusing discrete quantum dots for computing was proposed during this period. These “dots” were notquantum dots in the energy quantization sense, but rather relied on their ultra small capacitance, which wasa consequence of their very small size, to reveal measurable voltage changes with charge variations of onlya single electron. Such behavior is classical, except for tunneling between dots. In confinedsemiconductor dots, the energy quantization is superimposed on the Coulombic effects, but is not theprimary phenomenon of interest. At the heart of the fluorescence of Quantum dot nanocrystals is theformation of excitons, or Coulomb correlated electron-hole pairs. The exciton can be thought of as 15
  • 2. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012analogous to the excited state of traditional fluorophores; however, excitons typically have much longerlifetimes (up to ~µseconds), a property that can be advantageous in certain types of "time-gated detection"studies. Yet another distinction arises from the direct, predictable relationship between the physical size ofthe quantum dot and the energy of the exciton (therefore, the wavelength of emitted fluorescence). Thisproperty has been referred to as "tuneability", and is being widely exploited in the development ofmulticolor assays. Quantum dot nanocrystals are also extremely efficient machines for generatingfluorescence; their intrinsic brightness is often many times that observed for other classes of fluorophores.Another practical benefit of achieving fluorescence without involving conjugated double-bond systems isthat the photostability of Quantum dot nanocrystals is many orders of magnitude greater than thatassociated with traditional fluorescent molecules; this property enables long-term imaging experimentsunder conditions that would lead to the photo-induced deterioration of other types of fluorophores.2. 3- Dimensional Quantum Dot Simulation and Analysis: Different Boundary ConditionsFundamentally, quantum dot nanocrystals are fluorophores—substances that absorb photons of light, thenre-emit photons at a different wavelength. However, they exhibit some important differences as comparedto traditional fluorophores such as organic fluorescent dyes and naturally fluorescent proteins, ends there.Quantum dot nanocrystals are nanometer-scale (roughly protein-sized) atom clusters, containing from a fewhundred to a few thousand atoms of a semiconductor material (cadmium mixed with selenium or tellurium),which has been coated with an additional semiconductor shell (zinc sulfide) to improve the opticalproperties of the material. These particles fluoresce in a completely different way than do traditionalfluorophores, without the involvement of electronic transitions. In this experiment, at the very beginning ofthe simulation we have taken 3 dimensional device Structure of Cuboids shape. In the figure 1 that shapehas been shown. Here we have used the boundary conditions of:X dimensions: 5nmY Dimensions:5.5 nmZ Dimensions:6nmEffective Mass:0.067Energy Gap:1.43 eVDiscretization:0.565nmNo. Of states: 7As light Source and polarization, light polarization angle is 45, electron Fermi level is 5ev and temperatureis 300k. By following this condition, if we fabricate this device structure, we will have 3 dimensional wavefunction as shown in figure 2 and Energy state in figure 3. In the energy state, the approximate energy gapis 0.51 eV for the above fabrication criteria. Now, if we delve to the result of polarization of light source aswell as X- polarized light and dark transitions, we will find that in figure 4, at 0.77eV we will get 1e-30 arbunit Light and Dark transition strength and it is maxima for that particular condition. Similarly for Ypolarization, at 0.675 eV we will get highest Light and Dark transition strength. For Z polarization asshown in figure 5, we will get two identical Light and Dark transition strength points at 0.5 eV and 0.7 eV.Now, if we consider Light/ Dark transition for the angle of 45 Degree, Similarly, we will get two identicalLight and Dark transition strength points at 0.5 eV and 0.7 eV. If we now cogitate at the absorptionconditions as shown in Figure 6. Absorption at angle of 45 Degree, highest absorption id 51.5 arb unit byforming at energy levels of 0.47 eV and 0.56 eV, where 0.50 eV is the median of that energy level. For Xand Y polarization, we will get highest Light and Dark transition strength at only one point, but for Zpolarization, we will get two identical Light and Dark transition strength points. Now, we now alter thedevice structure. We will now fabricate through pyramid structure and after fabrication in figure 7.Absorption sweep for angle for pyramid has been shown. Here we have seen that, in three particular energylevels the Absorption are on the peak whereas for cuboid we have got 2 peaks. So from the simulationresults, we have seen that, for all kind of devices: cuboid, pyramid, spheroid, dome; the properties of 3D 16
  • 3. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012Wavefuntions are almost same. In the Energy states, energy gaps are almost equivalent. If we considerLight and dark Transitions for the X, Y and Z- Polarized for different structures, in a particular boundarycondition, Fermi Level energy are almost 0.5 eV, though there are one or more than two peaks dependingon the structure, polarization and light angle properties. Similarly Absorption sweep of angle theta andIntegrated absorption are almost equivalent unless the number of peaks.3. ConclusionIn this paper, property analysis of quantum dot cuboid nanocrystals with different nanostructures are shownby simulation results for particular device structure and boundary conditions of Light and dark Transitionsfor the X, Y and Z- Polarized for different structures and so forth. Finally from the simulation, it is evidentthat, the characteristics are almost equivalent for different nanostructures for a particular boundarycondition.ReferencesSyed Bahauddin Alam et. al, Modeling of Physics of Beta-Decay using Decay Energetics, in AmericanInstitute of Physics (AIP) Proceedings, 2012.Syed Bahauddin Alam et. al Dosimetry Control and Electromagnetic Shielding Analysis, in AmericanInstitute of Physics (AIP) Proceedings, 2012.Syed Bahauddin Alam et. al Transient and Condition Analysis for Gen-4 Nukes for Developing Countries,in American Institute of Physics (AIP) Proceedings, 2012.Syed Bahauddin Alam et al., Methodological Analysis of Bremmstrahlung Emission , published in theWorld Journal of Engineering and Pure and Applied Science, pp: 5-8,Volume: 1, Issue: 1 , Research |Reviews | Publications, June 2011.Syed Bahauddin Alam et al., Mathematical Analysis of Poisoning Effect, published in the World Journal ofEngineering and Pure and Applied Science, pp: 15-18, Volume:1, Issue: 1 Research | Reviews |Publications , June 2011.Syed Bahauddin Alam , Md. Nazmus Sakib, Md. Rishad Ahmed, Hussain Mohammed Dipu Kabir, KhaledRedwan, Md. Abdul Matin, Characteristic and Transient Analysis of Gen-4 Nuclear Power via ReactorKinetics and Accelerator Model in 2010 IEEE International Power and Energy Conference, PECON 2010,pp. 113-118, Malaysia, 29 Nov, 2010.Syed Bahauddin Alam, Hussain Mohammed Dipu Kabir, Md. Nazmus Sakib, Celia Shahnaz, ShaikhAnowarul Fattah, EM Shielding, Dosimetry Control and Xe(135)-Sm(149) Poisoning Effect for NuclearWaste Treatment in 2010 IEEE International Power and Energy Conference, PECON 2010, pp.101-106, Malaysia, 29 Nov,2010.Syed Bahauddin Alam, Hussain Mohammed Dipu Kabir, Md. Rishad Ahmed, A B M Rafi Sazzad, CeliaShahnaz, Shaikh Anowarul Fattah, Nuclear Waste Transmutation by Decay Energetics, Compton Imaging,Bremsstrahlung and Nuclei Dynamics in 2010 IEEE International Power and Energy Conference, PECON2010, pp. 107-112, Malaysia, 29 Nov, 2010.Syed Bahauddin Alam, Hussain Mohammed Dipu Kabir, A B M Rafi Sazzad, Khaled Redwan, IshtiaqueAziz, Imranul Kabir Chowdhury, Md. Abdul Matin, Can Gen-4 Nuclear Power and Reactor Technology beSafe and Reliable Future Energy for Developing Countries? In 2010 IEEE International Power and Energy 17
  • 4. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012Conference, PECON 2010, pp. 95-100, Malaysia, 29 Nov, 2010.Syed Bahauddin Alam, Md. Nazmus Sakib, Md Sabbir Ahsan, A B M Rafi Sazzad, Imranul KabirChowdhury, Simulation of Bremsstrahlung Production and Emission Process in 2nd InternationalConference on Intelligent Systems, Modelling and Simulation, ISMS2011, Malaysia, Phnom Penh(Cambodia) , 25-27 Jan, 2011.Syed Bahauddin Alam, Md. Nazmus Sakib, Md Sabbir Ahsan, Khaled Redwan, Imranul kabir, Simulationof Beta Transmutation by Decay Energetics in 2nd International Conference on Intelligent Systems,Modelling and Simulation, ISMS2011, Malaysia, Phnom Penh (Cambodia) , 25-27 Jan, 2011.Syed Bahauddin Alam, Md. Nazmus Sakib, A B M Rafi Sazzad, Imranul Kabir in Simulation and Analysisof Advanced Nuclear Reactor and Kinetics Model in 2nd International Conference on Intelligent Systems,Modelling and Simulation, ISMS2011, Malaysia, Phnom Penh (Cambodia) , 25-27 Jan, 2011. Figure 1. Cuboid shape for Simulation Figure 2. 3D Wave Funtion 18
  • 5. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012 Figure 3. Energy States Figure 4. X Polarization Figure 5. Z Polarization 19
  • 6. Advances in Physics Theories and Applications www.iiste.orgISSN 2224-719X (Paper) ISSN 2225-0638 (Online)Vol 3, 2012 Figure 6. Absorption at angle of 45 Degree Figure 7. Absorption sweep for angle for pyramid 20
  • 7. International Journals Call for PaperThe IISTE, a U.S. publisher, is currently hosting the academic journals listed below. The peer review process of the following journalsusually takes LESS THAN 14 business days and IISTE usually publishes a qualified article within 30 days. Authors shouldsend their full paper to the following email address. More information can be found in the IISTE website : www.iiste.orgBusiness, Economics, Finance and Management PAPER SUBMISSION EMAILEuropean Journal of Business and Management EJBM@iiste.orgResearch Journal of Finance and Accounting RJFA@iiste.orgJournal of Economics and Sustainable Development JESD@iiste.orgInformation and Knowledge Management IKM@iiste.orgDeveloping Country Studies DCS@iiste.orgIndustrial Engineering Letters IEL@iiste.orgPhysical Sciences, Mathematics and Chemistry PAPER SUBMISSION EMAILJournal of Natural Sciences Research JNSR@iiste.orgChemistry and Materials Research CMR@iiste.orgMathematical Theory and Modeling MTM@iiste.orgAdvances in Physics Theories and Applications APTA@iiste.orgChemical and Process Engineering Research CPER@iiste.orgEngineering, Technology and Systems PAPER SUBMISSION EMAILComputer Engineering and Intelligent Systems CEIS@iiste.orgInnovative Systems Design and Engineering ISDE@iiste.orgJournal of Energy Technologies and Policy JETP@iiste.orgInformation and Knowledge Management IKM@iiste.orgControl Theory and Informatics CTI@iiste.orgJournal of Information Engineering and Applications JIEA@iiste.orgIndustrial Engineering Letters IEL@iiste.orgNetwork and Complex Systems NCS@iiste.orgEnvironment, Civil, Materials Sciences PAPER SUBMISSION EMAILJournal of Environment and Earth Science JEES@iiste.orgCivil and Environmental Research CER@iiste.orgJournal of Natural Sciences Research JNSR@iiste.orgCivil and Environmental Research CER@iiste.orgLife Science, Food and Medical Sciences PAPER SUBMISSION EMAILJournal of Natural Sciences Research JNSR@iiste.orgJournal of Biology, Agriculture and Healthcare JBAH@iiste.orgFood Science and Quality Management FSQM@iiste.orgChemistry and Materials Research CMR@iiste.orgEducation, and other Social Sciences PAPER SUBMISSION EMAILJournal of Education and Practice JEP@iiste.orgJournal of Law, Policy and Globalization JLPG@iiste.org Global knowledge sharing:New Media and Mass Communication NMMC@iiste.org EBSCO, Index Copernicus, UlrichsJournal of Energy Technologies and Policy JETP@iiste.org Periodicals Directory, JournalTOCS, PKPHistorical Research Letter HRL@iiste.org Open Archives Harvester, Bielefeld Academic Search Engine, ElektronischePublic Policy and Administration Research PPAR@iiste.org Zeitschriftenbibliothek EZB, Open J-Gate,International Affairs and Global Strategy IAGS@iiste.org OCLC WorldCat, Universe Digtial Library ,Research on Humanities and Social Sciences RHSS@iiste.org NewJour, Google Scholar.Developing Country Studies DCS@iiste.org IISTE is member of CrossRef. All journalsArts and Design Studies ADS@iiste.org have high IC Impact Factor Values (ICV).

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