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EV Powertrain Simulations in Saber
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EV Powertrain Simulations in Saber
1.
Alan Courtay October 29,
2015 Paris Saber Seminar, La Defense Modeling of PMSM Motor Drive Multi Time Scale Analysis with Saber
2.
© 2015 Synopsys,
Inc. 2 Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle Published PMSM Electric Motor Max power / torque: 80 kW / 280 Nm Li-Ion Battery Total energy: 24 kWh Max power > 90 kW Number of cells: 192 (2 parallel, 96 series) Cell voltage: 3.8 V Nominal system voltage: 364.8 V Gear Ratio 1/7.94 Curb Weight 1521 kg 0-100 km/h ~ 10 sec Drag Coefficient 0.28 Inverter Frequency 5 kHz Assumed PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles Inverter Efficiency 90% Gear Efficiency 97% Wheel Radius 0.3 m
3.
© 2015 Synopsys,
Inc. 3 Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle Published PMSM Electric Motor Max power / torque: 80 kW / 280 Nm Li-Ion Battery Total energy: 24 kWh Max power > 90 kW Number of cells: 192 (2 parallel, 96 series) Cell voltage: 3.8 V Nominal system voltage: 364.8 V Gear Ratio 1/7.94 Curb Weight 1521 kg 0-100 km/h ~ 10 sec Drag Coefficient 0.28 Inverter Frequency 5 kHz Assumed PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles Inverter Efficiency 90% Gear Efficiency 97% Wheel Radius 0.3 m IPMSM model from JMAG-RT Motor Model Library
4.
© 2015 Synopsys,
Inc. 4 1 2 3 4• Level 1 – Behavioral Li-Ion battery – Dynamic thermal dq inverter and PMSM – Thermal network • Level 2 – Average/non-switching inverter /w TLU losses – LdLq or detailed FEA-based PMSM • Level 3 – Ideal switch inverter /w TLU losses • Level 4 – Improved datasheet-driven IGBT1 Abstraction Levels
5.
© 2015 Synopsys,
Inc. 5 1
6.
© 2015 Synopsys,
Inc. 6 1Simplified Vehicle Dynamics
7.
© 2015 Synopsys,
Inc. 7 1 ia,va ib,vb ic,vc a b c Sinusoidal currents and switching/PWM voltages are abstracted to only retain phase and amplitude of signals in synchronous reference frame iq id vq vd i v
8.
© 2015 Synopsys,
Inc. 8 1 FEA-based look-up tables used for flux saturation Ld(id) and Lq(iq), and speed/current dependent iron loss
9.
© 2015 Synopsys,
Inc. 9 1Reactance Torque
10.
© 2015 Synopsys,
Inc. 10 1 NS Reactance Torque
11.
© 2015 Synopsys,
Inc. 11 1Reactance Torque angle torque 90o
12.
© 2015 Synopsys,
Inc. 12 1Reluctance Torque Br Hc m The permanent magnets have low permeability / high reluctance (~ air gap). The rotor orients itself in the position of least flux resistance.
13.
© 2015 Synopsys,
Inc. 13 1 Average Inverter Model including Efficiency Map
14.
© 2015 Synopsys,
Inc. 14 Switching Losses 1 ≈ 𝛼 ∙ 𝒗 𝒐𝒇𝒇 ∙ 𝒊 𝒐𝒏 on+off 𝑷 𝒔𝒘 = 𝑬 𝒔𝒘 ∙ 𝒇 𝒔 = 𝑬 𝒔𝒘 (𝒗 𝒐𝒇𝒇, 𝒊 𝒐𝒏) rec+ 𝒊 𝒐𝒏 (𝑨) 𝒗 𝒐𝒇𝒇 (𝑽) 𝑬 𝒔𝒘 (𝑱)
15.
© 2015 Synopsys,
Inc. 15 v i one 1D look-up table: 𝑃 𝑐(𝑖) = 𝑖. 𝑣(𝑖) Conduction Losses 1
16.
© 2015 Synopsys,
Inc. 16 1 Field Oriented Control Vector Control
17.
© 2015 Synopsys,
Inc. 17 1 𝑖∗2 = 𝑖 𝑑 ∗2 + 𝑖 𝑞 ∗2 𝜕𝑇 𝜕𝑖∗ = 0 𝑖 𝑑 ∗ = 𝜑 𝑚 − 𝜑 𝑚 2 + 8 𝐿 𝑞 − 𝐿 𝑑 2 𝑖∗2 4 𝐿 𝑞 − 𝐿 𝑑 𝑖 𝑞 ∗ = 𝑠𝑔𝑛(𝑖∗) 𝑖∗2 − 𝑖 𝑑 ∗2 Maximum Torque Per Amp 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖∗ Field Oriented ControlField Oriented Control MTPA 𝑖∗ 𝑖 𝑑 ∗ 𝜃𝑖 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞
18.
© 2015 Synopsys,
Inc. 18 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control
19.
© 2015 Synopsys,
Inc. 19 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝑅𝑖 𝑞 + 𝐿 𝑞 𝑑𝑖 𝑞 𝑑𝑡 + 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = 𝑅𝑖 𝑑 + 𝐿 𝑑 𝑑𝑖 𝑑 𝑑𝑡 − 𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 R neglected, steady-state
20.
© 2015 Synopsys,
Inc. 20 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 At high speed, back-EMF exceeds DC link voltage
21.
© 2015 Synopsys,
Inc. 21 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF
22.
© 2015 Synopsys,
Inc. 22 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control MTPA 𝑖 − 𝜑 𝑚 𝐿 𝑑 𝜑 𝑚 𝐿 𝑞 − 𝐿 𝑑 𝑖 𝑞 𝑖 𝑑 1Flux Weakening 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF 𝑣2 = 𝑣 𝑑 2 + 𝑣 𝑞 2 Voltage Limit Ellipse 𝑣2 𝜔2 = 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 2 + 𝐿 𝑞 2 𝑖 𝑞 2 𝜃𝑖
23.
© 2015 Synopsys,
Inc. 23 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control MTPA 𝑖 − 𝜑 𝑚 𝐿 𝑑 𝜑 𝑚 𝐿 𝑞 − 𝐿 𝑑 Increasing Speed 𝑖 𝑞 𝑖 𝑑 1Flux Weakening 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF 𝜃𝑖 𝑣2 = 𝑣 𝑑 2 + 𝑣 𝑞 2 Voltage Limit Ellipse 𝑣2 𝜔2 = 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 2 + 𝐿 𝑞 2 𝑖 𝑞 2
24.
© 2015 Synopsys,
Inc. 24 1 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Feedforward Compensation
25.
© 2015 Synopsys,
Inc. 25 1• Analyze system efficiency over long driving cycles • Evaluate energy flow in critical regimes (deceleration, braking) • Handle power dissipation and cooling • Design stable motor control (e.g. FOC)
26.
© 2015 Synopsys,
Inc. 26 1• Analyze system efficiency over long driving cycles • Evaluate energy flow in critical regimes (deceleration, braking) • Handle power dissipation and cooling • Design stable motor control (e.g. FOC)
27.
© 2015 Synopsys,
Inc. 27 1 2 Sinusoidal currents and voltages (no switching)
28.
© 2015 Synopsys,
Inc. 28 1 2 a b c 𝜃 𝑚 𝜃𝑖 i Accounts for 1. Mutual coupling between phases 2. Flux saturation 3. Spatial harmonics
29.
© 2015 Synopsys,
Inc. 29 1 2 • Analyze system dynamics • Evaluate energy flow in critical regimes (deceleration, braking) • Design stable motor control (e.g. FOC) • Evaluate torque ripples Motor Torque Regenerative Braking Sloped Terrain Startup
30.
© 2015 Synopsys,
Inc. 30 1 2 • Analyze system dynamics • Evaluate energy flow in critical regimes (deceleration, braking) • Design stable motor control (e.g. FOC) • Evaluate torque ripples Torque ripples due to spatial harmonics
31.
© 2015 Synopsys,
Inc. 31 1 2 3 • Design PWM control (e.g. compensate dead time distortion) • Mitigate faults in critical regimes (e.g. in flux weakening mode) Dead time distortion (corrected and uncorrected)
32.
© 2015 Synopsys,
Inc. 32 1 2 3 4 • Optimize gate drive tradeoff losses vs. EMI noise • Control current/voltage overshoot • Prevent accidental turn-on 𝑖 = 𝐶𝑐𝑔 ∙ 𝑑𝑉𝑐𝑒 𝑑𝑡 ≫ 1 Vg < Vge(th) Rg Vgei > Vge(th) c e 𝑉 = 𝐿 𝑒 ∙ 𝑑𝑖 𝑐 𝑑𝑡 ≪ −1 Accidental turn-on mechanisms
33.
© 2015 Synopsys,
Inc. 33 2016.03 IGBT Tool • Improved matching of transient characteristics – Cge made non-linear – Control of turn-off voltage oscillations – Decoupling between turn-on and turn-off • Easier characterization – Optimizer at most steps, including transient characteristics – Turn-on and turn-off characteristics combined in one view – Improved DC anchor points – Library of pre-characterized components – Numerous bug fixes
34.
© 2015 Synopsys,
Inc. 34 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current J1 J2 + +
35.
© 2015 Synopsys,
Inc. 35 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base Rb PNP N-MOS P+ N+ imos ip (𝛽) ++ + holes electrons • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
36.
© 2015 Synopsys,
Inc. 36 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ imos ip+ + • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
37.
© 2015 Synopsys,
Inc. 37 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ +• Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
38.
© 2015 Synopsys,
Inc. 38
39.
© 2015 Synopsys,
Inc. 39 IKW75N65EL5 Static Characteristics
40.
© 2015 Synopsys,
Inc. 40 Quasi-Static Characteristics IKW75N65EL5
41.
© 2015 Synopsys,
Inc. 41 IKW75N65EL5 Quasi-Static Characteristics
42.
© 2015 Synopsys,
Inc. 42 Ic Vcc Inductive Clamp Test Circuit Vcc Rg(off) Vg(on) Vg(off) Lp DUT (IGBT) -15V Ic DUT (Diode) Rg(on) Vg(on)
43.
© 2015 Synopsys,
Inc. 43 11 1 1 2 2 2 2 3 3 3 3 4 4 4 4 5 5 5 5 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒 𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
44.
© 2015 Synopsys,
Inc. 44 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒 𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒 Cies = dQg / dVgs Miller plateau Vgs ~1.2nF ~1.2nF
45.
© 2015 Synopsys,
Inc. 45 IKW75N65EL5 Non Quasi-Static Characteristics
46.
© 2015 Synopsys,
Inc. 46 IKW75N65EL5 Non Quasi-Static Characteristics
47.
© 2015 Synopsys,
Inc. 47 IKW75N65EL5 Non Quasi-Static Characteristics
48.
© 2015 Synopsys,
Inc. 48 IKW75N65EL5 Thermal Characteristics Cauer networkFoster network Duty cycle zero sufficient to match the other curvesOnly physical if connected to temperature source
49.
© 2015 Synopsys,
Inc. 49 Future Work • Merging of MOSFET and IGBT tools • Improve DC characteristics for SiC MOSFET’s • sw1_l4 and pwld with accurate switching losses (TLU) • Battery characterization tool (with enhanced model) NXP TrenchMOS BUK9640-100A
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