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Alan Courtay
October 29, 2015
Paris Saber Seminar, La Defense
Modeling of PMSM Motor Drive
Multi Time Scale Analysis with Saber
© 2015 Synopsys, Inc. 2
Simplified Electric Vehicle Powertrain
Modeled after Market Available Electric Vehicle
Published
PMSM Electric Motor Max power / torque: 80 kW / 280 Nm
Li-Ion Battery
Total energy: 24 kWh
Max power > 90 kW
Number of cells: 192 (2 parallel, 96 series)
Cell voltage: 3.8 V
Nominal system voltage: 364.8 V
Gear Ratio 1/7.94
Curb Weight 1521 kg
0-100 km/h ~ 10 sec
Drag Coefficient 0.28
Inverter Frequency 5 kHz
Assumed
PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles
Inverter Efficiency 90%
Gear Efficiency 97%
Wheel Radius 0.3 m
© 2015 Synopsys, Inc. 3
Simplified Electric Vehicle Powertrain
Modeled after Market Available Electric Vehicle
Published
PMSM Electric Motor Max power / torque: 80 kW / 280 Nm
Li-Ion Battery
Total energy: 24 kWh
Max power > 90 kW
Number of cells: 192 (2 parallel, 96 series)
Cell voltage: 3.8 V
Nominal system voltage: 364.8 V
Gear Ratio 1/7.94
Curb Weight 1521 kg
0-100 km/h ~ 10 sec
Drag Coefficient 0.28
Inverter Frequency 5 kHz
Assumed
PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles
Inverter Efficiency 90%
Gear Efficiency 97%
Wheel Radius 0.3 m
IPMSM model from
JMAG-RT Motor Model
Library
© 2015 Synopsys, Inc. 4
1
2
3
4• Level 1
– Behavioral Li-Ion battery
– Dynamic thermal dq inverter and PMSM
– Thermal network
• Level 2
– Average/non-switching inverter /w TLU losses
– LdLq or detailed FEA-based PMSM
• Level 3
– Ideal switch inverter /w TLU losses
• Level 4
– Improved datasheet-driven IGBT1
Abstraction Levels
© 2015 Synopsys, Inc. 5
1
© 2015 Synopsys, Inc. 6
1Simplified Vehicle Dynamics
© 2015 Synopsys, Inc. 7
1
ia,va
ib,vb
ic,vc
a
b
c
Sinusoidal currents and switching/PWM voltages are abstracted to only
retain phase and amplitude of signals in synchronous reference frame
iq
id
vq
vd
i
v
© 2015 Synopsys, Inc. 8
1
FEA-based look-up tables used for
flux saturation Ld(id) and Lq(iq), and
speed/current dependent iron loss
© 2015 Synopsys, Inc. 9
1Reactance Torque
© 2015 Synopsys, Inc. 10
1
NS
Reactance Torque
© 2015 Synopsys, Inc. 11
1Reactance Torque
angle
torque
90o
© 2015 Synopsys, Inc. 12
1Reluctance Torque
Br
Hc
m
The permanent magnets have low
permeability / high reluctance (~ air
gap). The rotor orients itself in the
position of least flux resistance.
© 2015 Synopsys, Inc. 13
1
Average Inverter Model
including Efficiency Map
© 2015 Synopsys, Inc. 14
Switching Losses
1
≈ 𝛼 ∙ 𝒗 𝒐𝒇𝒇 ∙ 𝒊 𝒐𝒏
on+off
𝑷 𝒔𝒘 = 𝑬 𝒔𝒘 ∙ 𝒇 𝒔
= 𝑬 𝒔𝒘 (𝒗 𝒐𝒇𝒇, 𝒊 𝒐𝒏)
rec+
𝒊 𝒐𝒏 (𝑨) 𝒗 𝒐𝒇𝒇 (𝑽)
𝑬 𝒔𝒘 (𝑱)
© 2015 Synopsys, Inc. 15
v
i
one 1D look-up table: 𝑃 𝑐(𝑖) = 𝑖. 𝑣(𝑖)
Conduction Losses
1
© 2015 Synopsys, Inc. 16
1
Field Oriented Control
Vector Control
© 2015 Synopsys, Inc. 17
1
𝑖∗2
= 𝑖 𝑑
∗2
+ 𝑖 𝑞
∗2
𝜕𝑇
𝜕𝑖∗ = 0
𝑖 𝑑
∗
=
𝜑 𝑚 − 𝜑 𝑚
2 + 8 𝐿 𝑞 − 𝐿 𝑑
2
𝑖∗2
4 𝐿 𝑞 − 𝐿 𝑑
𝑖 𝑞
∗
= 𝑠𝑔𝑛(𝑖∗) 𝑖∗2
− 𝑖 𝑑
∗2
Maximum Torque Per Amp
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖∗
Field Oriented ControlField Oriented Control
MTPA 𝑖∗
𝑖 𝑑
∗
𝜃𝑖
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
© 2015 Synopsys, Inc. 18
1Flux Weakening
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
© 2015 Synopsys, Inc. 19
1Flux Weakening
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
𝑉𝑞 = 𝑅𝑖 𝑞 + 𝐿 𝑞
𝑑𝑖 𝑞
𝑑𝑡
+ 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = 𝑅𝑖 𝑑 + 𝐿 𝑑
𝑑𝑖 𝑑
𝑑𝑡
− 𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
R neglected,
steady-state
© 2015 Synopsys, Inc. 20
1Flux Weakening
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
At high speed, back-EMF
exceeds DC link voltage
© 2015 Synopsys, Inc. 21
1Flux Weakening
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
© 2015 Synopsys, Inc. 22
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
MTPA 𝑖
−
𝜑 𝑚
𝐿 𝑑
𝜑 𝑚
𝐿 𝑞 − 𝐿 𝑑
𝑖 𝑞
𝑖 𝑑
1Flux Weakening
𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
𝑣2
= 𝑣 𝑑
2
+ 𝑣 𝑞
2
Voltage Limit Ellipse
𝑣2
𝜔2
= 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
2
+ 𝐿 𝑞
2
𝑖 𝑞
2
𝜃𝑖
© 2015 Synopsys, Inc. 23
𝑖 𝑑
∗
𝑖 𝑞
∗
𝑖 𝑑
𝑖 𝑞
Field Oriented Control
MTPA
𝑖
−
𝜑 𝑚
𝐿 𝑑
𝜑 𝑚
𝐿 𝑞 − 𝐿 𝑑
Increasing Speed
𝑖 𝑞
𝑖 𝑑
1Flux Weakening
𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
Increase current angle (negative
component of id) to “weaken”
magnet flux and reduce back-EMF
𝜃𝑖
𝑣2
= 𝑣 𝑑
2
+ 𝑣 𝑞
2
Voltage Limit Ellipse
𝑣2
𝜔2
= 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
2
+ 𝐿 𝑞
2
𝑖 𝑞
2
© 2015 Synopsys, Inc. 24
1
Field Oriented Control
𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚
𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞
𝑇 =
3
4
𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞
Feedforward Compensation
© 2015 Synopsys, Inc. 25
1• Analyze system efficiency over long driving cycles
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Handle power dissipation and cooling
• Design stable motor control (e.g. FOC)
© 2015 Synopsys, Inc. 26
1• Analyze system efficiency over long driving cycles
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Handle power dissipation and cooling
• Design stable motor control (e.g. FOC)
© 2015 Synopsys, Inc. 27
1
2
Sinusoidal currents and voltages (no switching)
© 2015 Synopsys, Inc. 28
1
2
a
b
c
𝜃 𝑚
𝜃𝑖
i
Accounts for
1. Mutual coupling between phases
2. Flux saturation
3. Spatial harmonics
© 2015 Synopsys, Inc. 29
1
2
• Analyze system dynamics
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Design stable motor control (e.g. FOC)
• Evaluate torque ripples
Motor
Torque
Regenerative
Braking
Sloped Terrain Startup
© 2015 Synopsys, Inc. 30
1
2
• Analyze system dynamics
• Evaluate energy flow in critical regimes
(deceleration, braking)
• Design stable motor control (e.g. FOC)
• Evaluate torque ripples
Torque ripples due to
spatial harmonics
© 2015 Synopsys, Inc. 31
1
2
3
• Design PWM control (e.g. compensate dead time distortion)
• Mitigate faults in critical regimes (e.g. in flux weakening mode)
Dead time distortion
(corrected and uncorrected)
© 2015 Synopsys, Inc. 32
1
2
3
4
• Optimize gate drive tradeoff losses vs. EMI noise
• Control current/voltage overshoot
• Prevent accidental turn-on
𝑖 = 𝐶𝑐𝑔 ∙
𝑑𝑉𝑐𝑒
𝑑𝑡
≫ 1
Vg < Vge(th)
Rg
Vgei > Vge(th)
c
e
𝑉 = 𝐿 𝑒 ∙
𝑑𝑖 𝑐
𝑑𝑡
≪ −1
Accidental turn-on
mechanisms
© 2015 Synopsys, Inc. 33
2016.03 IGBT Tool
• Improved matching of transient
characteristics
– Cge made non-linear
– Control of turn-off voltage oscillations
– Decoupling between turn-on and turn-off
• Easier characterization
– Optimizer at most steps, including
transient characteristics
– Turn-on and turn-off characteristics
combined in one view
– Improved DC anchor points
– Library of pre-characterized components
– Numerous bug fixes
© 2015 Synopsys, Inc. 34
IGBT Principle
Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
J1
J2
+
+
© 2015 Synopsys, Inc. 35
IGBT Principle
Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
Rb
PNP
N-MOS
P+
N+
imos ip
(𝛽)
++
+
holes
electrons
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 36
IGBT Principle
Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
imos ip+
+
• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 37
IGBT Principle
Collector/Anode
Emitter/Cathode
P+ Emitter
Gate
P
N- Base
P+
N+
+• Two junctions
– J1 space charge region develops
when Vce < 0
– J2 space charge region develops
when Vce > 0 and Vge < Vge(th)
– Wide and low doped N- base region
→ large blocking voltage
• BJT+MOSFET
– Insulated gate → voltage control
– Holes injected from P+ emitter →
conductivity modulation
– High forward conduction current
density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝
• Slow removal of carriers in the
base → longer switching time
during turn-off and tail current
© 2015 Synopsys, Inc. 38
© 2015 Synopsys, Inc. 39
IKW75N65EL5
Static Characteristics
© 2015 Synopsys, Inc. 40
Quasi-Static Characteristics
IKW75N65EL5
© 2015 Synopsys, Inc. 41
IKW75N65EL5
Quasi-Static Characteristics
© 2015 Synopsys, Inc. 42
Ic
Vcc
Inductive Clamp Test Circuit
Vcc
Rg(off)
Vg(on)
Vg(off)
Lp
DUT
(IGBT)
-15V
Ic
DUT
(Diode)
Rg(on)
Vg(on)
© 2015 Synopsys, Inc. 43
11
1
1
2
2
2
2
3
3
3
3
4
4
4
4
5
5
5
5
𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐
𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒
𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
© 2015 Synopsys, Inc. 44
𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐
𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒
𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
Cies = dQg / dVgs
Miller plateau Vgs
~1.2nF
~1.2nF
© 2015 Synopsys, Inc. 45
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 46
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 47
IKW75N65EL5
Non Quasi-Static Characteristics
© 2015 Synopsys, Inc. 48
IKW75N65EL5
Thermal Characteristics
Cauer networkFoster network
Duty cycle zero
sufficient to match
the other curvesOnly physical if
connected to
temperature source
© 2015 Synopsys, Inc. 49
Future Work
• Merging of MOSFET and IGBT
tools
• Improve DC characteristics for
SiC MOSFET’s
• sw1_l4 and pwld with accurate
switching losses (TLU)
• Battery characterization tool
(with enhanced model)
NXP TrenchMOS BUK9640-100A

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EV Powertrain Simulations in Saber

  • 1. Alan Courtay October 29, 2015 Paris Saber Seminar, La Defense Modeling of PMSM Motor Drive Multi Time Scale Analysis with Saber
  • 2. © 2015 Synopsys, Inc. 2 Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle Published PMSM Electric Motor Max power / torque: 80 kW / 280 Nm Li-Ion Battery Total energy: 24 kWh Max power > 90 kW Number of cells: 192 (2 parallel, 96 series) Cell voltage: 3.8 V Nominal system voltage: 364.8 V Gear Ratio 1/7.94 Curb Weight 1521 kg 0-100 km/h ~ 10 sec Drag Coefficient 0.28 Inverter Frequency 5 kHz Assumed PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles Inverter Efficiency 90% Gear Efficiency 97% Wheel Radius 0.3 m
  • 3. © 2015 Synopsys, Inc. 3 Simplified Electric Vehicle Powertrain Modeled after Market Available Electric Vehicle Published PMSM Electric Motor Max power / torque: 80 kW / 280 Nm Li-Ion Battery Total energy: 24 kWh Max power > 90 kW Number of cells: 192 (2 parallel, 96 series) Cell voltage: 3.8 V Nominal system voltage: 364.8 V Gear Ratio 1/7.94 Curb Weight 1521 kg 0-100 km/h ~ 10 sec Drag Coefficient 0.28 Inverter Frequency 5 kHz Assumed PMSM Electric Motor Max power / torque: 100 kW / 178 Nm, 8 poles Inverter Efficiency 90% Gear Efficiency 97% Wheel Radius 0.3 m IPMSM model from JMAG-RT Motor Model Library
  • 4. © 2015 Synopsys, Inc. 4 1 2 3 4• Level 1 – Behavioral Li-Ion battery – Dynamic thermal dq inverter and PMSM – Thermal network • Level 2 – Average/non-switching inverter /w TLU losses – LdLq or detailed FEA-based PMSM • Level 3 – Ideal switch inverter /w TLU losses • Level 4 – Improved datasheet-driven IGBT1 Abstraction Levels
  • 5. © 2015 Synopsys, Inc. 5 1
  • 6. © 2015 Synopsys, Inc. 6 1Simplified Vehicle Dynamics
  • 7. © 2015 Synopsys, Inc. 7 1 ia,va ib,vb ic,vc a b c Sinusoidal currents and switching/PWM voltages are abstracted to only retain phase and amplitude of signals in synchronous reference frame iq id vq vd i v
  • 8. © 2015 Synopsys, Inc. 8 1 FEA-based look-up tables used for flux saturation Ld(id) and Lq(iq), and speed/current dependent iron loss
  • 9. © 2015 Synopsys, Inc. 9 1Reactance Torque
  • 10. © 2015 Synopsys, Inc. 10 1 NS Reactance Torque
  • 11. © 2015 Synopsys, Inc. 11 1Reactance Torque angle torque 90o
  • 12. © 2015 Synopsys, Inc. 12 1Reluctance Torque Br Hc m The permanent magnets have low permeability / high reluctance (~ air gap). The rotor orients itself in the position of least flux resistance.
  • 13. © 2015 Synopsys, Inc. 13 1 Average Inverter Model including Efficiency Map
  • 14. © 2015 Synopsys, Inc. 14 Switching Losses 1 ≈ 𝛼 ∙ 𝒗 𝒐𝒇𝒇 ∙ 𝒊 𝒐𝒏 on+off 𝑷 𝒔𝒘 = 𝑬 𝒔𝒘 ∙ 𝒇 𝒔 = 𝑬 𝒔𝒘 (𝒗 𝒐𝒇𝒇, 𝒊 𝒐𝒏) rec+ 𝒊 𝒐𝒏 (𝑨) 𝒗 𝒐𝒇𝒇 (𝑽) 𝑬 𝒔𝒘 (𝑱)
  • 15. © 2015 Synopsys, Inc. 15 v i one 1D look-up table: 𝑃 𝑐(𝑖) = 𝑖. 𝑣(𝑖) Conduction Losses 1
  • 16. © 2015 Synopsys, Inc. 16 1 Field Oriented Control Vector Control
  • 17. © 2015 Synopsys, Inc. 17 1 𝑖∗2 = 𝑖 𝑑 ∗2 + 𝑖 𝑞 ∗2 𝜕𝑇 𝜕𝑖∗ = 0 𝑖 𝑑 ∗ = 𝜑 𝑚 − 𝜑 𝑚 2 + 8 𝐿 𝑞 − 𝐿 𝑑 2 𝑖∗2 4 𝐿 𝑞 − 𝐿 𝑑 𝑖 𝑞 ∗ = 𝑠𝑔𝑛(𝑖∗) 𝑖∗2 − 𝑖 𝑑 ∗2 Maximum Torque Per Amp 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖∗ Field Oriented ControlField Oriented Control MTPA 𝑖∗ 𝑖 𝑑 ∗ 𝜃𝑖 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞
  • 18. © 2015 Synopsys, Inc. 18 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control
  • 19. © 2015 Synopsys, Inc. 19 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝑅𝑖 𝑞 + 𝐿 𝑞 𝑑𝑖 𝑞 𝑑𝑡 + 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = 𝑅𝑖 𝑑 + 𝐿 𝑑 𝑑𝑖 𝑑 𝑑𝑡 − 𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 R neglected, steady-state
  • 20. © 2015 Synopsys, Inc. 20 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 At high speed, back-EMF exceeds DC link voltage
  • 21. © 2015 Synopsys, Inc. 21 1Flux Weakening 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF
  • 22. © 2015 Synopsys, Inc. 22 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control MTPA 𝑖 − 𝜑 𝑚 𝐿 𝑑 𝜑 𝑚 𝐿 𝑞 − 𝐿 𝑑 𝑖 𝑞 𝑖 𝑑 1Flux Weakening 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF 𝑣2 = 𝑣 𝑑 2 + 𝑣 𝑞 2 Voltage Limit Ellipse 𝑣2 𝜔2 = 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 2 + 𝐿 𝑞 2 𝑖 𝑞 2 𝜃𝑖
  • 23. © 2015 Synopsys, Inc. 23 𝑖 𝑑 ∗ 𝑖 𝑞 ∗ 𝑖 𝑑 𝑖 𝑞 Field Oriented Control MTPA 𝑖 − 𝜑 𝑚 𝐿 𝑑 𝜑 𝑚 𝐿 𝑞 − 𝐿 𝑑 Increasing Speed 𝑖 𝑞 𝑖 𝑑 1Flux Weakening 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Increase current angle (negative component of id) to “weaken” magnet flux and reduce back-EMF 𝜃𝑖 𝑣2 = 𝑣 𝑑 2 + 𝑣 𝑞 2 Voltage Limit Ellipse 𝑣2 𝜔2 = 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 2 + 𝐿 𝑞 2 𝑖 𝑞 2
  • 24. © 2015 Synopsys, Inc. 24 1 Field Oriented Control 𝑉𝑞 = 𝜔 𝐿 𝑑 𝑖 𝑑 + 𝜑 𝑚 𝑉𝑑 = −𝜔𝐿 𝑞 𝑖 𝑞 𝑇 = 3 4 𝑝 𝜑 𝑚 𝑖 𝑞 + 𝐿 𝑑 − 𝐿 𝑞 𝑖 𝑑 𝑖 𝑞 Feedforward Compensation
  • 25. © 2015 Synopsys, Inc. 25 1• Analyze system efficiency over long driving cycles • Evaluate energy flow in critical regimes (deceleration, braking) • Handle power dissipation and cooling • Design stable motor control (e.g. FOC)
  • 26. © 2015 Synopsys, Inc. 26 1• Analyze system efficiency over long driving cycles • Evaluate energy flow in critical regimes (deceleration, braking) • Handle power dissipation and cooling • Design stable motor control (e.g. FOC)
  • 27. © 2015 Synopsys, Inc. 27 1 2 Sinusoidal currents and voltages (no switching)
  • 28. © 2015 Synopsys, Inc. 28 1 2 a b c 𝜃 𝑚 𝜃𝑖 i Accounts for 1. Mutual coupling between phases 2. Flux saturation 3. Spatial harmonics
  • 29. © 2015 Synopsys, Inc. 29 1 2 • Analyze system dynamics • Evaluate energy flow in critical regimes (deceleration, braking) • Design stable motor control (e.g. FOC) • Evaluate torque ripples Motor Torque Regenerative Braking Sloped Terrain Startup
  • 30. © 2015 Synopsys, Inc. 30 1 2 • Analyze system dynamics • Evaluate energy flow in critical regimes (deceleration, braking) • Design stable motor control (e.g. FOC) • Evaluate torque ripples Torque ripples due to spatial harmonics
  • 31. © 2015 Synopsys, Inc. 31 1 2 3 • Design PWM control (e.g. compensate dead time distortion) • Mitigate faults in critical regimes (e.g. in flux weakening mode) Dead time distortion (corrected and uncorrected)
  • 32. © 2015 Synopsys, Inc. 32 1 2 3 4 • Optimize gate drive tradeoff losses vs. EMI noise • Control current/voltage overshoot • Prevent accidental turn-on 𝑖 = 𝐶𝑐𝑔 ∙ 𝑑𝑉𝑐𝑒 𝑑𝑡 ≫ 1 Vg < Vge(th) Rg Vgei > Vge(th) c e 𝑉 = 𝐿 𝑒 ∙ 𝑑𝑖 𝑐 𝑑𝑡 ≪ −1 Accidental turn-on mechanisms
  • 33. © 2015 Synopsys, Inc. 33 2016.03 IGBT Tool • Improved matching of transient characteristics – Cge made non-linear – Control of turn-off voltage oscillations – Decoupling between turn-on and turn-off • Easier characterization – Optimizer at most steps, including transient characteristics – Turn-on and turn-off characteristics combined in one view – Improved DC anchor points – Library of pre-characterized components – Numerous bug fixes
  • 34. © 2015 Synopsys, Inc. 34 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current J1 J2 + +
  • 35. © 2015 Synopsys, Inc. 35 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base Rb PNP N-MOS P+ N+ imos ip (𝛽) ++ + holes electrons • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
  • 36. © 2015 Synopsys, Inc. 36 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ imos ip+ + • Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
  • 37. © 2015 Synopsys, Inc. 37 IGBT Principle Collector/Anode Emitter/Cathode P+ Emitter Gate P N- Base P+ N+ +• Two junctions – J1 space charge region develops when Vce < 0 – J2 space charge region develops when Vce > 0 and Vge < Vge(th) – Wide and low doped N- base region → large blocking voltage • BJT+MOSFET – Insulated gate → voltage control – Holes injected from P+ emitter → conductivity modulation – High forward conduction current density: 𝑖 𝑐 = 𝑖 𝑚𝑜𝑠 + 𝑖 𝑝 • Slow removal of carriers in the base → longer switching time during turn-off and tail current
  • 38. © 2015 Synopsys, Inc. 38
  • 39. © 2015 Synopsys, Inc. 39 IKW75N65EL5 Static Characteristics
  • 40. © 2015 Synopsys, Inc. 40 Quasi-Static Characteristics IKW75N65EL5
  • 41. © 2015 Synopsys, Inc. 41 IKW75N65EL5 Quasi-Static Characteristics
  • 42. © 2015 Synopsys, Inc. 42 Ic Vcc Inductive Clamp Test Circuit Vcc Rg(off) Vg(on) Vg(off) Lp DUT (IGBT) -15V Ic DUT (Diode) Rg(on) Vg(on)
  • 43. © 2015 Synopsys, Inc. 43 11 1 1 2 2 2 2 3 3 3 3 4 4 4 4 5 5 5 5 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒 𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒
  • 44. © 2015 Synopsys, Inc. 44 𝐶𝑟𝑒𝑠 = 𝐶𝑔𝑐 𝐶𝑖𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑔𝑒 𝐶𝑜𝑒𝑠 = 𝐶𝑔𝑐 + 𝐶𝑐𝑒 Cies = dQg / dVgs Miller plateau Vgs ~1.2nF ~1.2nF
  • 45. © 2015 Synopsys, Inc. 45 IKW75N65EL5 Non Quasi-Static Characteristics
  • 46. © 2015 Synopsys, Inc. 46 IKW75N65EL5 Non Quasi-Static Characteristics
  • 47. © 2015 Synopsys, Inc. 47 IKW75N65EL5 Non Quasi-Static Characteristics
  • 48. © 2015 Synopsys, Inc. 48 IKW75N65EL5 Thermal Characteristics Cauer networkFoster network Duty cycle zero sufficient to match the other curvesOnly physical if connected to temperature source
  • 49. © 2015 Synopsys, Inc. 49 Future Work • Merging of MOSFET and IGBT tools • Improve DC characteristics for SiC MOSFET’s • sw1_l4 and pwld with accurate switching losses (TLU) • Battery characterization tool (with enhanced model) NXP TrenchMOS BUK9640-100A